Damageless sputter deposition for metal gate CMOS technology

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 35-36

  Takeuchi, H ^a   She, Min ^a   Watanabe, K ^b   King, Tsu Jae ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HITACHI LTD   (Japan)

Author keywords

Capacitors; CMOS technology; Dielectric materials; Electric breakdown; Inorganic materials; Leakage current; MOSFETs; Rapid thermal annealing; Rapid thermal processing; Sputtering

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOLYBDENUM OXIDE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SPUTTERING;

CMOS TECHNOLOGY; GATE MATERIALS; GATE OXIDE INTEGRITY; HIGH-ENERGY PARTICLES; INORGANIC MATERIALS; MOSFETS; SPUTTERING PROCESS; THIN GATE OXIDES;

MOSFET DEVICES;

EID: 10644293022     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226859     Document Type: Conference Paper

References (6)

1. Semiconductor Industry Association, ITRS 2001 Edition (2001)
2. L. Chang et al., IEDM Tech. Digest, p.719 (2000)
3. P. Ranade et al., IEDM Tech. Digest, p.363 (2002)
4. J.H. Lee et al., IEDM Tech. Digest, p.359 (2002)
5. J.-S. Lee et al., IEEE Elec. Dev. Lett., Vol. 23(12), (2002)
6. K. Chen et al., Solid-State Elect., Vol. 39, p.1515 (1996)