Metal-organic chemical vapor deposited copper interconnects for deep submicron integrated circuits

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 270-272

  Li, C Y ^a   Zhang, D H ^b   Lu, P W ^c   Su, S S ^c   Qi, D X ^a   He, X ^c   Kumar, Rakesh ^c   Balasubramanian, N ^c  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Chemical vapor deposition; Copper; Electrical properties and measurement

Indexed keywords

COPPER; ELECTRIC RESISTANCE; ELECTROMIGRATION; INTEGRATED CIRCUITS; INTERCONNECTION NETWORKS; IONIZATION; LEAKAGE CURRENTS; PHYSICAL VAPOR DEPOSITION; PLASMAS;

COPPER INTERCONNECTS; ELECTRICAL PROPERTIES AND MEASUREMENTS; SELF-IONIZED METAL PLASMA (SMP);

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 10644253761     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.122     Document Type: Article

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