Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 188, Issue 1-4, 2002, Pages 205-209

  Too, P ^a   Ahmed, S ^a   Gwilliam, R ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Electrical isolation; Inp, Implant temprature; Ion implantation

Indexed keywords

ANNEALING; HALL EFFECT; HEAT TREATMENT; HELIUM; ION BOMBARDMENT; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ELECTRICAL ISOLATION;

ION IMPLANTATION;

EID: 0036533812     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01091-6     Document Type: Conference Paper

References (15)