Implant isolation study of In0.53Ga0.47As

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1999, Pages 29-32

  Almonte, M ^a   Yu, K M ^a   Haller, E E ^a   Ridgway, M C ^a   Hou, H ^a   Mirecki Millunchick, J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFUSION; ELECTRIC PROPERTIES; ION IMPLANTATION; IRON; NEON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

COMPENSATION INDUCED EFFECT; DOPANT INDUCED COMPENSATION; STRUCTURAL CHARACTERIZATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032598544     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)