메뉴 건너뛰기




Volumn 3226, Issue , 1997, Pages 22-30

Design and development of microstructures for MEMS applications

Author keywords

Bulk and surface micromachining technology; MEMS; Suspended microstructures; Wafer bonding

Indexed keywords

ANNEALING; BONDING; BORON; COMPOSITE MICROMECHANICS; ELECTROSTATIC ACTUATORS; MACHINING; MEMS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONIC PROCESSING; MICROMACHINING; MICROMECHANICS; MICROSTRUCTURE; NANOCANTILEVERS; POLYSILICON; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE MICROMACHINING; TECHNOLOGY;

EID: 10444252236     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284571     Document Type: Conference Paper
Times cited : (10)

References (14)
  • 1
    • 0002345301 scopus 로고
    • An electrochemical p-n junction etch-stop for the formation of silicon microstructures
    • T. N. Jackson, M. A. Tischler, and K. D. Wise, "An electrochemical p-n junction etch-stop for the formation of silicon microstructures", IEEE Electron Device Lett., Vol. EDL-2, 1981, p. 44.
    • (1981) IEEE Electron Device Lett , vol.EDL-2 , pp. 44
    • Jackson, T.N.1    Tischler, M.A.2    Wise, K.D.3
  • 2
    • 0018029736 scopus 로고
    • Dynamic micromechanics on silicon: Techniques and devices
    • Kurt E. Petersen, "Dynamic micromechanics on silicon: techniques and devices", IEEE Transactions on Electron Devices, Vol. ED-25 (10), 1978, p. 1241.
    • (1978) IEEE Transactions on Electron Devices , vol.ED-25 , Issue.10 , pp. 1241
    • Petersen, K.E.1
  • 3
    • 0000901941 scopus 로고    scopus 로고
    • Chr. Burrer and J. Esteve, Thermally driven micromechanical bridge resonators, Sensors and Actuators A, 41-42, 1994, p. 680.
    • Chr. Burrer and J. Esteve, "Thermally driven micromechanical bridge resonators", Sensors and Actuators A, Vol. 41-42, 1994, p. 680.
  • 4
    • 0024647478 scopus 로고    scopus 로고
    • Ben Kloeck, Scott D. Collins, Nico F. de. Rooij, and Rosemary L. Smith, Study of electrochemical etch-stop for high-precision thickness control of silicon membranes, IEEE Transactions on Electron Devices, 36 (4), 1989, p. 663.
    • Ben Kloeck, Scott D. Collins, Nico F. de. Rooij, and Rosemary L. Smith, "Study of electrochemical etch-stop for high-precision thickness control of silicon membranes", IEEE Transactions on Electron Devices, Vol. 36 (4), 1989, p. 663.
  • 5
    • 0024014442 scopus 로고
    • The effect of an interfacial p-n junction on the electrochemical passivation of silicon in aqueous ethylenediamine-pyrocatechol
    • R. L. Gealer, H. K. Karsten, and S. M. Ward, "The effect of an interfacial p-n junction on the electrochemical passivation of silicon in aqueous ethylenediamine-pyrocatechol", J. Electrochem. Soc, Vol. 135 (5), 1988, p. 1180.
    • (1988) J. Electrochem. Soc , vol.135 , Issue.5 , pp. 1180
    • Gealer, R.L.1    Karsten, H.K.2    Ward, S.M.3
  • 6
    • 0022769862 scopus 로고
    • Silicon cantilever beams fabricated by electrochemically controlled etching for sensor applications
    • P. M. Saro, and A. W. van Herwaarden, "Silicon cantilever beams fabricated by electrochemically controlled etching for sensor applications", J. Electrochem. Soc, Vol. 133 (8), 1986, p. 1724.
    • (1986) J. Electrochem. Soc , vol.133 , Issue.8 , pp. 1724
    • Saro, P.M.1    van Herwaarden, A.W.2
  • 7
    • 0024716701 scopus 로고
    • Formation of etch-stop structures utilizing ion-beam synthesized buried oxide and nitride layers in silicon
    • I. G. Stoev, R. A. Yankov, and C. Jeynes, "Formation of etch-stop structures utilizing ion-beam synthesized buried oxide and nitride layers in silicon", Sensors and Actuators, Vol. 19, 1989, p. 183.
    • (1989) Sensors and Actuators , vol.19 , pp. 183
    • Stoev, I.G.1    Yankov, R.A.2    Jeynes, C.3
  • 8
    • 0026188346 scopus 로고
    • Piezoresistive pressure sensors based on polycrystalline silicon
    • V. Mosser, J. Suski, J. Goss, and E. Obemeier, "Piezoresistive pressure sensors based on polycrystalline silicon", Sensors and Actuators A, 28, 1991, p. 113.
    • (1991) Sensors and Actuators A , vol.28 , pp. 113
    • Mosser, V.1    Suski, J.2    Goss, J.3    Obemeier, E.4
  • 9
    • 0020800128 scopus 로고
    • Stress in polycrystalline and amorphous silicon thin films
    • R. T. Howe, and R. S. Muller, "Stress in polycrystalline and amorphous silicon thin films", J. Appl. Phys., 54(3), 1983, p. 4674.
    • (1983) J. Appl. Phys , vol.54 , Issue.3 , pp. 4674
    • Howe, R.T.1    Muller, R.S.2
  • 10
    • 0022664868 scopus 로고
    • Structure and crystal growth of atmospheric and low-pressurechemical-vapour-deposited silicon films
    • R. Bisaro, J. Magarino, N. Proust, and K. Zellama, "Structure and crystal growth of atmospheric and low-pressurechemical-vapour-deposited silicon films", J. Appl. Phys., 59(4), 1986, p. 1167.
    • (1986) J. Appl. Phys , vol.59 , Issue.4 , pp. 1167
    • Bisaro, R.1    Magarino, J.2    Proust, N.3    Zellama, K.4
  • 11
    • 0001424495 scopus 로고
    • Novel microstructures for the in-situ measurement of mechanical properties of thin films
    • Mehran Mehregani, Roger T. Howe, and Stephen D. Senturia, "Novel microstructures for the in-situ measurement of mechanical properties of thin films", J. Appl. Phys., 62(9), 1987, p. 3579.
    • (1987) J. Appl. Phys , vol.62 , Issue.9 , pp. 3579
    • Mehregani, M.1    Howe, R.T.2    Senturia, S.D.3
  • 12
    • 0027615160 scopus 로고
    • Stress in low pressure chemical vapour deposition polycrystalline silicon thin films deposited below 0.1 Torr
    • A. Benitez, J. Bausells, E. Cabruja, J. Esteve, and J. Samitier, "Stress in low pressure chemical vapour deposition polycrystalline silicon thin films deposited below 0.1 Torr", Sensors and Actuators A, 37-38, 1993, p. 723.
    • (1993) Sensors and Actuators A , vol.37-38 , pp. 723
    • Benitez, A.1    Bausells, J.2    Cabruja, E.3    Esteve, J.4    Samitier, J.5
  • 13
    • 0026943088 scopus 로고
    • Properties of polysilicon films annealed by rapid thermal annealing process
    • Lj. Ristic, M. L. Kniffin, R. Gutteridge, and H. G. Hughes, "Properties of polysilicon films annealed by rapid thermal annealing process", Thin Solid Films, 220, 1992, p. 106.
    • (1992) Thin Solid Films , vol.220 , pp. 106
    • Ristic, L.1    Kniffin, M.L.2    Gutteridge, R.3    Hughes, H.G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.