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Volumn 36, Issue 4, 1989, Pages 663-669

Study of Electrochemical Etch-Stop for High-Precision Thickness Control of Silicon Membranes

Author keywords

[No Author keywords available]

Indexed keywords

MEMBRANES--ETCHING; PIEZOELECTRIC TRANSDUCERS; PRESSURE TRANSDUCERS; SENSORS;

EID: 0024647478     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.22472     Document Type: Article
Times cited : (168)

References (17)
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  • 3
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    • Jackson, T.N.1    Tischler, M.A.2    Wise, K.D.3
  • 4
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    • Diaphragm thickness control in silicon pressure sensors using an anodic oxidation etch-stop
    • M. Hirata, S. Suwazono, and H. Tanigawa, “Diaphragm thickness control in silicon pressure sensors using an anodic oxidation etch-stop,” J. Electrochem. Soc., vol. 134. no. 8A, p. 2037, 1987.
    • (1987) J. Electrochem. Soc. , vol.134 , Issue.8A , pp. 2037
    • Hirata, M.1    Suwazono, S.2    Tanigawa, H.3
  • 5
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    • Silicon diaphragm pressure sensors fabricated by anodic oxidation etch-stop
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    • Hirata, M.1    Suzuki, K.2    Tanigawa, H.3
  • 6
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    • Study of the etch-stop mechanism in silicon
    • E. D. Palik, J. W. Faust, H. F. Grey, and R. F. Green, “Study of the etch-stop mechanism in silicon,” J. Electrochem. Soc., vol. 129, no. 9, p. 2051, 1982.
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    • Palik, E.D.1    Faust, J.W.2    Grey, H.F.3    Green, R.F.4
  • 7
    • 0020763879 scopus 로고
    • Study of the orientation dependent etching and initial anodization of Si in aqueous KOH
    • J. W. Faust and E. D. Palik, “Study of the orientation dependent etching and initial anodization of Si in aqueous KOH,” J. Electrochem. Soc, vol. 130, no. 6, p. 1413, 1983.
    • (1983) J. Electrochem. Soc , vol.130 , Issue.6 , pp. 1413
    • Faust, J.W.1    Palik, E.D.2
  • 8
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    • Bias-dependent etching of silicon in aqueous KOH
    • O. J. Glembocki, R. E. Stahlbush, and M. Tomkiewicz, “Bias-dependent etching of silicon in aqueous KOH,” J. Electrochem. Soc, vol. 132, no. 1, p. 145, 1985.
    • (1985) J. Electrochem. Soc , vol.132 , Issue.1 , pp. 145
    • Glembocki, O.J.1    Stahlbush, R.E.2    Tomkiewicz, M.3
  • 9
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    • The potential dependence of silicon anisotropic etching in KOH at 60°C
    • R. L. Smith, B. Kloeck, N. F. de Rooij, and S. D. Collins, “The potential dependence of silicon anisotropic etching in KOH at 60°C,” J. Electroanal. Chem., vol. 238, p. 103, 1987.
    • (1987) J. Electroanal. Chem. , vol.238 , pp. 103
    • Smith, R.L.1    Kloeck, B.2    de Rooij, N.F.3    Collins, S.D.4
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    • Modeling and simulation of solid state pressure sensors
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  • 12
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    • The formation of surfaces by diffusion limited annihilation
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    • Meakin, P.1    Deutch, J.M.2
  • 15
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    • Mechanism of anodic passivation on < 111 > silicon in KOH
    • to be published.
    • R. L. Smith, B. Kloeck, and S. D. Collins, “Mechanism of anodic passivation on < 111 > silicon in KOH,” J. Electrochem. Soc, to be published.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.