Dislocation reduction in GaN epilayers by maskless pendeo-epitaxy process

Journal of the Korean Physical Society

Volumn 45, Issue 5 II, 2004, Pages 1253-1256

  Park, Dong Jun ^a   Lee, Jeong Yong ^a   Cho, Hyung Koun ^b   Hong, Chang Hee ^c   Cheong, Hung Seob ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Dong A University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

Dislocation density; GaN; Metalorganic chemical vapor deposition (MOCVD); Pendeo epitaxy

Indexed keywords

EID: 10444224611     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (16)

1. H. K. Cho and J. Y. Lee, J. Korean Phys. Soc. 42, S547 (2003).
2. C. S. Kim, H. K. Cho, R. J. Choi, Y. B. haho, H. J. Lee and C. -H. Hong, J. Korean Phys. Soc. 44, 133 (2004).
3. S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
4. S. C. Binari and H. C. Dietrich, in GaN and Related Materials, edited by S. J. Pearton (Gordon and Breach, New York, 1997), p. 509.
5. A. Sakai, H. Sunakawa and A. Usui, Appl. Phys. Lett. 73, 481 (1998).
6. T. Zheleva, S. Smith, D. Thomson, K. Linthicum, P. Rajagopal and R. F. Davis, J. Electron. Mater. 28, L5 (1999).
7. K. Linthicum, T. Gherke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor and R. F. Davis, Appl. Phys. Lett. 67, 1541 (1995).
8. Amy M. Roakowski, Edward A. Preble, Sven Einfeldt, Peter M. Miraglia and Robert F. Davis, IEEE JOURNAL OF QUANTUM ELECTRONICS 38, 8 (2002).
9. R. F. Davis, T. Gehrke, K. J. Linthicum, T. S. Zheleva, P. Rajagopal, C. A. Zorman and M. Mehregany, Mater. Res. Soc. Symp. Proc. 595, W2.1.1 (2000).
10. T. Gehrke, K. J. Linthicum, P. Rajagopal, E. A. Preble and R. F. Davis, Mater. Res. Soc. Symp. Proc. 595, W2.4.1 (2000).
11. H. Miyake, M. Yamaguchi, M. Haino, A. Motogaito, K. Hiramatsu, S. Nambu, Y. Kawaguchi, N. Sawaki, Y. Iyechika, T. Maeda and I. Akasaki, Mater. Res. Soc. Symp. Proc. 595, W2.3.1 (2000).
12. P. Kung, D. Walker, M. Hamilton, J. Diaz and M. Razeghi, Appl. Phys. Lett. 74, 570 (1999).
13. M. H. Kim, Y. H. Choi, J. H. Yi, M. Yang, J. N. Jeon, S. W. Kim and S. J. Leem, Appl. Phys. Lett. 79, 1619 (2001).
14. P. Vennegues, B. Beaumont, V. Bousquet, M. Vaille and P. Gibart, J. Appl. Phys. 87, 4175 (2000).
15. Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P. A. Grudowski, C. J. Eiting and R. D. Dupuis. Journal of Nitride Semiconductor Research 4S1, 4.6 (1999).
16. Kazumasa Hiramatsu, Katsuya Nishiyama, Masaru Onishi, Hiromitsu Mizutani, Mitsuhisa Narukawa, Atsushi Motogaito, Hideto Miyake, Yasushi Iyechika and Takayoshi Maeda, Journal of Crystal Growth 221, 316 (2000).