Crystal orientation dependence on electrical properties of Pb(Zr,Ti)O 3 thick films grown on Si substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 B, 2004, Pages 6567-6570

  Okamoto, Shoji ^a   Yokoyama, Shintaro ^a   Honda, Yoshihisa ^a   Asano, Gouji ^a   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric; MOCVD; PZT; Si; SrRuO3

Indexed keywords

DATA ACQUISITION; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; X RAY DIFFRACTION;

FIELD-INDUCED STRAIN; PB(ZR, TI)O3 (PZT); POLARIZATION-ELECTRIC FIELD (P-E) HYSTERESIS; SRRUO3;

THICK FILMS;

EID: 10444223002     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6567     Document Type: Conference Paper

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