Focused ion beam prepared contacts of tungsten to silicon characterized by a cross-bridge Kelvin resistor approach

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5827-5829

  Langfischer, H ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ION BEAM ASSISTED DEPOSITION; RESISTORS; SILICON; TUNGSTEN;

METAL-SILICON CONTACTS;

ELECTRIC CONTACTS;

EID: 0038636225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562738     Document Type: Article

References (7)

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