Thick elevation of silicon on patterned structure using ion implantation induced selective etching

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 20-24

  Huda, M Q ^a,b   Sakamoto, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

Ion implantation; Polysilicon; Selective etching; Silicon

Indexed keywords

ANNEALING; ARGON; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; ETCHING; ION IMPLANTATION; NUCLEATION; POLYSILICON;

PATTERNED STRUCTURES; SELECTIVE ETCHING;

NUCLEAR INSTRUMENTATION;

EID: 1042288930     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.015     Document Type: Conference Paper

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