Technique for large elevation of source/drain using implantation mediated selective etching

Electrochemical and Solid-State Letters

Volumn 6, Issue 10, 2003, Pages

  Huda, M Q ^a,b   Sakamoto, K ^a   Tanoue, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; MOS DEVICES; POLYSILICON; SEMICONDUCTING SILICON; SILICA;

EPITAXIAL SILICON; FACETING EFFECTS; IMPLANTATION MEDIATED SELECTIVE ETCHING; SOURCE DRAIN ELEVATION; WET ETCHING;

ETCHING;

EID: 1042279107     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1601811     Document Type: Article

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