Modelling the correlation in the high-frequency noise of (hetero-junction) bipolar transistors using charge-partitioning

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 221-224

  Paasschens, J C J ^a   Havens, R J ^a   Tiemeijer, L F ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; RESISTORS; SCATTERING PARAMETERS; SEMICONDUCTOR DOPING; SHOT NOISE;

CHARGE-PARTITIONING; CIRCUIT SIMULATOR; COLLECTOR CURRENTS; HIGH-FREQUENCY NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1042266039     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274970     Document Type: Conference Paper

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