Comparative analysis of the implantation-induced structural modifications in GaAs and Ge

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 318-323

  Desnica Frankovic, I D ^a  

^a RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

Amorphous; GaAs; Ge; Ion implantation

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; ION IMPLANTATION; MICROSTRUCTURE; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; STOICHIOMETRY;

ENERGETIC IONS; ION FLUENCES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1042265807     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.054     Document Type: Conference Paper

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