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Volumn 68, Issue 24, 2003, Pages

Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; SILICON;

EID: 1042265122     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.245205     Document Type: Article
Times cited : (15)

References (23)
  • 1
    • 0032573499 scopus 로고    scopus 로고
    • G.A. Prinz, Science 282, 1660 (1998).
    • (1998) Science , vol.282 , pp. 1660
    • Prinz, G.A.1
  • 10
    • 2842586600 scopus 로고
    • F. Seitz and D. Turnbull (Academic, New York
    • Y. Yafet, in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1963), Vol. 14, pp. 1–98.
    • (1963) Solid State Physics , vol.14 , pp. 1-98
    • Yafet, Y.1
  • 17
    • 33646646483 scopus 로고
    • The spin-orbit part of impurity potentials leads to a spin-dependent scattering mechanism, but its matrix element is usually negligible compared to the one that causes the Elliot-Yafet scattering
    • The spin-orbit part of impurity potentials leads to a spin-dependent scattering mechanism, but its matrix element is usually negligible compared to the one that causes the Elliot-Yafet scattering. See J.R. Asik, M.A. Ball, and C.P. Slichter, Phys. Rev. 181, 645 (1969).
    • (1969) Phys. Rev. , vol.181 , pp. 645
    • Asik, J.R.1    Ball, M.A.2    Slichter, C.P.3
  • 21
    • 85038976194 scopus 로고    scopus 로고
    • Licenciatura thesis, University of Buenos Aires
    • M. A. Kuroda, Licenciatura thesis, University of Buenos Aires, 2002;
    • (2002)
    • Kuroda, M.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.