Oxygen in GaAs and its relation to the EL3 defect investigated by TSC and PICTS

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 223-226

  Wohlrab, A ^a   Grundig Wendrock B ^a   Jurisch, M ^b   Kiessling, F M ^c   Niklas, J R ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; APPROXIMATION THEORY; CHARGE CARRIERS; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; FOURIER TRANSFORMS; IMPURITIES; INFRARED SPECTROMETERS; OXYGEN; POWDERS; THERMAL EFFECTS;

DEEP TRAPS; EQ III-V SEMICONDUCTORS; IMPURITY AND DEFECT LEVELS; PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS); THERMALLY SIMULATED CURRENTS (TSC);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10344249393     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004148     Document Type: Conference Paper

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