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Volumn 27, Issue 2, 1998, Pages 62-68

Characterization of deep centers in undoped semi-insulating GaAs substrates by normalized thermally stimulated current spectroscopy: Comparison of 100 and 150 mm wafers

Author keywords

Defects; Normalized thermally stimulated current (NTSC) spectroscopy; Semi insulating (SI) GaAs

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRIC FIELD EFFECTS; LOW TEMPERATURE PROPERTIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

EID: 0031999651     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0189-x     Document Type: Article
Times cited : (3)

References (15)
  • 13
    • 3843136293 scopus 로고    scopus 로고
    • Unpublished
    • Unpublished.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.