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Volumn 27, Issue 2, 1998, Pages 62-68
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Characterization of deep centers in undoped semi-insulating GaAs substrates by normalized thermally stimulated current spectroscopy: Comparison of 100 and 150 mm wafers
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Author keywords
Defects; Normalized thermally stimulated current (NTSC) spectroscopy; Semi insulating (SI) GaAs
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH FROM MELT;
ELECTRIC FIELD EFFECTS;
LOW TEMPERATURE PROPERTIES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SPECTROSCOPIC ANALYSIS;
SUBSTRATES;
INFRARED PHOTOCURRENTS;
LOW/HIGH PRESSURE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUES;
NORMALIZED THERMALLY STIMULATED CURRENT (NTSC) SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0031999651
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-998-0189-x Document Type: Article |
Times cited : (3)
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References (15)
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