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Volumn 27, Issue 4, 2004, Pages 643-650

Mechanical FEM simulation of bonding process on Cu LowK wafers

Author keywords

Integrated circuit (IC) processing; LowK materials

Indexed keywords

BONDING; COMPUTER SIMULATION; COPPER; DIELECTRIC MATERIALS; ELECTRIC WIRE; FINITE ELEMENT METHOD; HARDNESS; MATHEMATICAL MODELS; MECHANICAL PROPERTIES; SILICON COMPOUNDS; STIFFNESS; YIELD STRESS;

EID: 10244250286     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2004.838862     Document Type: Article
Times cited : (44)

References (9)
  • 1
    • 0036613504 scopus 로고    scopus 로고
    • "Fully process-compatible layout design on bond pad to improve wire bond reliability in CMOS ICs"
    • June
    • M.-D. Ker and J.-J. Peng, "Fully process-compatible layout design on bond pad to improve wire bond reliability in CMOS ICs," IEEE Trans. Comp. Packag. Technol., vol. 25, pp. 309-316, June 2002.
    • (2002) IEEE Trans. Comp. Packag. Technol. , vol.25 , pp. 309-316
    • Ker, M.-D.1    Peng, J.-J.2
  • 2
    • 0034828968 scopus 로고    scopus 로고
    • "Interfacial adhesion study for copper/SiLK interconnects in flip-chip packages"
    • Orlando, FL, May
    • M. R. Miller and P. S. Ho, "Interfacial adhesion study for copper /SiLK interconnects in flip-chip packages," in Proc. 51st Electronic Components Technology Conf., Orlando, FL, May 2001.
    • (2001) Proc. 51st Electronic Components Technology Conf.
    • Miller, M.R.1    Ho, P.S.2
  • 3
    • 85087577646 scopus 로고    scopus 로고
    • "Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics"
    • Reno, NV
    • M. Saran et al., "Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics," in Proc. 36th Annu. Int. Reliability Physics Symp., Reno, NV, 1998.
    • (1998) Proc. 36th Annu. Int. Reliability Physics Symp.
    • Saran, M.1
  • 6
    • 0009555738 scopus 로고    scopus 로고
    • "Wire bonding to advanced copper-lowK integrated circuits, the metal/dielectric stacks and material considerations"
    • Baltimore, MD, Oct
    • G. Harmann et al., "Wire bonding to advanced copper-lowK integrated circuits, the metal/dielectric stacks and material considerations," in Proc. 34th Int. Symp. Microelectronics (IMAPS'01), Baltimore, MD, Oct. 2001.
    • (2001) Proc. 34th Int. Symp. Microelectronics (IMAPS'01)
    • Harmann, G.1
  • 8
    • 0036292944 scopus 로고    scopus 로고
    • "Wire bonding process impact on lowK dielectric material in damascene copper integrated circuits"
    • San Diego, CA, May
    • V. Kripesh et al., "Wire bonding process impact on lowK dielectric material in damascene copper integrated circuits," in Proc. 52nd Electronic Components Technology Conf., San Diego, CA, May 2002.
    • (2002) Proc. 52nd Electronic Components Technology Conf.
    • Kripesh, V.1
  • 9
    • 84966605890 scopus 로고    scopus 로고
    • "Fine pitch copper wire bonding on copper bond pad: Process optimization"
    • Kaohsiung, Taiwan, R.O.C., Dec
    • L. Wai et al., "Fine pitch copper wire bonding on copper bond pad: Process optimization," in Proc. 4th Int. Symp. Electronic Materials Packaging, Kaohsiung, Taiwan, R.O.C., Dec. 2002.
    • (2002) Proc. 4th Int. Symp. Electronic Materials Packaging
    • Wai, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.