Integrated DFB laser electro-absorption modulator based on identical MQW-double stack active layer for high-speed modulation beyond 10 Gbit/s

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 236-238

  Saravanan, Brem Kumar ^a   Gerlach, Philipp ^b   Peschke, Martin ^b   Knoedl, Thomas ^a   Schreiner, Rupert ^a   Hanke, Christian ^a   Stegmueller, Bernhard ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; LASER THRESHOLD CURRENT; MODULATION BANDWIDTH; SINGLE MODE SPECTRUM;

BANDWIDTH; CAPACITANCE; ENERGY GAP; LIGHT AMPLIFIERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT MODULATORS;

EID: 10244241621     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2004.1442656     Document Type: Conference Paper

References (13)

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