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Volumn 33, Issue 3, 1998, Pages 375-382

Growth of InGaAs/GaAs on offcut substrates by MOVPE: Influence on macrosteps and dislocations formation

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

EID: 0032295956     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-4079(1998)33:3<375::aid-crat375>3.0.co;2-r     Document Type: Article
Times cited : (3)

References (24)
  • 1
  • 20
    • 0006445284 scopus 로고
    • Ed. J. W. Matthews, Academic Press, New York
    • MATTHEWS, J. W.: Epitaxial Growth, pt. B, Ed. J. W. Matthews, Academic Press, New York 1975, p. 560
    • (1975) Epitaxial Growth , Issue.PART B , pp. 560
    • Matthews, J.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.