Kinetic approach to barrier capacitance calculation and its application to modelling of microstructures with metal-semiconductor junctions

Semiconductor Science and Technology

Volumn 15, Issue 3, 2000, Pages 301-307

  Kokorev, M F ^a   Maleev, N A ^b  

^a St Petersburg Stt Electrotechnical   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; ELECTRIC POTENTIAL; NONLINEAR EQUATIONS; SEMICONDUCTOR DEVICE MODELS;

BARRIER CAPACITANCE; CAPACITANCE-VOLTAGE CHARACTERISTICS; NONLINEAR BOLTZMANN-POISSON EQUATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033903423     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/3/314     Document Type: Article

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