Effect of growth conditions on epitaxial lateral overgrowth of InP on InP/Si (001) substrate by hydride vapor phase epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4997, Issue , 2003, Pages 221-231

  Sun, Yan Ting ^a   Lourdudoss, Sebastian ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

EPD; Epitaxial lateral overgrowth; Gas phase supersaturation; Heteroepitaxy; High resolution X ray diffraction; III V on Si; InP on Si; Low pressure hydride vapor phase epitaxy; Stacking faults

Indexed keywords

CRYSTAL ORIENTATION; SEMICONDUCTING SILICON; STACKING FAULTS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0042861775     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.473278     Document Type: Conference Paper

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