Preparation of porous silicon by electrochemical method

Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology

Volumn 37, Issue 9, 2004, Pages 823-826

  Tian, Bin ^a   Hu, Ming ^a   Zhang, Zhi Sheng ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Cracking; Electrochemical method; Morphology; Porous silicon

Indexed keywords

CRACKING (CHEMICAL); CRYSTAL LATTICES; ELECTROCHEMISTRY; MICROELECTROMECHANICAL DEVICES; MORPHOLOGY; OXIDATION;

DOUBLE CELL; ELECTROCHEMICAL METHOD; POROUS SILICON LAYER; POROUS SILICON OXIDIZATION;

POROUS SILICON;

EID: 10044257771     PISSN: 04932137     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Loni A, Simons A J, Cox T I, et al. Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation [J]. Electronics Letters, 1995, 31(15): 1288-1289.
2. Canham L T, Cox T I, Loni A, et al. Progress towards silicon optoelectronics using porous silicon technology [J]. Applied Surface Science, 1996, 102(8): 436-441.
3. Kronast W, Muller B, Siedel W, et al. Single-chip condenser microphone using porous silicon as sacrificial layer for the air gap [J]. Sensors and Actuators, 2001, A87(3): 188-193.
4. DucsoCs, Vazsonyi E, Adam M, et al. Porous silicon bulk micromachining for thermally isolated membrane formation [J]. Sensors and Actuators, 1997, A60(1-3): 235-239.
5. Steiner P, Lang W. Micromachining applications of porous silicon [J]. Thin Solid Films, 1995, 255(1-2): 52-58.
6. Canham L. Properties of Porous Silicon [M]. London: INSPEC, 1997.
7. Bischoff T, Muller G, Weiser W, et al. Frontside micromachining using porous-silicon sacrificial-layer technologies [J]. Sensors and Actuators, 1997, A60(1-3): 228-234.