Evidence for excess vacancy defects in the Pd-Si system: Positron annihilation, x-ray diffraction and Auger electron spectroscopy study

Journal of Physics Condensed Matter

Volumn 15, Issue 46, 2003, Pages

  Abhaya, S ^a   Amarendra, G ^a   Reddy, G L N ^a   Rajaraman, R ^a   Venugopal Rao, G ^a   Narayanan, K L ^b  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIFFUSION IN SOLIDS; PALLADIUM; POINT DEFECTS; SILICON; SILICON COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

DEPTH-RESOLVED POSITRON ANNIHILATION; SILICIDE; VACANCY DEFECTS;

INTERFACES (MATERIALS);

EID: 0348252050     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/46/L01     Document Type: Letter

References (24)

1. Muraka, S P 1983 Silicides for VLSI Applications (New York: Academic)
2. Tu K N and Yip S 1978 Thin Films-Interdiffusion and Reaction (New York: Wiley)
3. Wolf D and Yip S (ed) 1992 Materials Interfaces: Atomic Level Structure and Properties (London: Chapman and Hall)
4. Ho K T et al 1985 J. Appl. Phys. 57 227
5. Comrie C M and Egan J M 1989 J. Vac. Sci. Technol. A 7 1492
6. Wen D S et al 1987 Appl. Phys. Lett. 51 1182
7. Italyantsev A G and Kuznetsov A Yu 1993 Appl. Surf. Sci. 73 203
8. Ronay M and Schad R G 1990 Phys. Rev. Lett. 64 2042
9. Svensson B G, Aboelfotoh M O and Lindstrom J L 1991 Phys. Rev. Lett. 66, 3028
10. Schultz P J and Lynn K G 1988 Rev. Mod. Phys. 60 701
11. Krause-Rehberg R and Leipner H S 1998 Positron Annihilation in Semiconductors (Berlin: Springer)
12. Saarinen K, Hautojarvi P and Corbel C 1998 Identification of Defects in Semiconductors ed M Stavola (New York: Academic)
13. Amarendra G et al 1997 Curr. Sci. 73 401
14. Van Veen A et al 1991 AIP Conf. Proc. 218 171
15. Rubloff G W et al 1981 Phys. Rev. B 23 4183
16. Farmer J W, Wandt M A E and Pretorius R 1990 Phys. Rev. Lett. 56 1643
17. Egan J M and Comrie C M 1989 Phys. Rev. B 40 11670
18. Hakala M, Puska M J and Nieminen R M 1998 Phys. Rev. B 57 7621
19. Asoka-kumar P, Lynn K G and Welch D O 1994 J. Appl. Phys. 76 4935
20. Xu J et al 1999 Appl. Phys. Lett. 74 997
21. Coleman P G, Knights A P and Gwilliam R M 1999 J. Appl. Phys. 86 5988
22. Brusa R S et al 2000 Phys. Rev. B 61 10154
23. Amarendra G et al 2001 Phys. Rev. B 63 224112
24. Amarendra G 2002 Defects Diffus. Semicond. 200-202 189