20 nm polysilicon gate patterning and application in 36 nm complementary metal-oxide-semiconductor devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2352-2359

  Xu, Qiuxia ^a   He, Qian ^a   Liu, Ming ^a   Zhao, Yuying ^a   Chen, Baoqing ^a   Ha, Zhengsheng ^a   Ye, Tianchun ^a   Wu, Dexin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BINDING ENERGY; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); HIGH RESOLUTION ELECTRON MICROSCOPY; PLASMA ETCHING; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH RATES; RESIST ASHING;

POLYSILICON;

EID: 0942289275     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.162051410.1116/1.1620514     Document Type: Article

References (12)

1. D. J. Oostra, R. P. van Ingen, A. Haring, and A. E. de Vries, Appl. Phys. Lett. 50, 1506 (1987).
2. L. Y. Tsou, J. Electrochem. Soc. 136, 2354 (1989).
3. L. Y. Tsou, J. Electrochem. Soc. 136, 3003 (1989).
4. O. S. Nakagawa and S. Ashok, J. Appl. Phys. 69, 2057 (1991).
5. D. X. Ma, T. A. Lin, and C. H. Chen, J. Vac. Sci. Technol. A 10, 1217 (1992).
6. M. Haverlag, G. S. Oehrlein, and D. Vender, J. Vac. Sci. Technol. B 12, 96 (1994).
7. K. V. Guinn, C. C. Cheng, and V. M. Donnelly, J. Vac. Sci. Technol. B 13, 214 (1995).
8. F. H. Bell and O. Joubert, J. Vac. Sci. Technol. B 15, 88 (1997).
9. X. Qiuxia, Z. Suojing, Zh. Yu Yin, and F. Shuming, J. Vac. Sci. Technol. B 8, 1058 (1990).
10. http://www-device.eecs.berkeley.edu/qmcv.html
11. S. Iwata and A. Ishizaka, J. Appl. Phys. 79, 6653 (1996).
12. T. M. Bestwick and G. S. Oehrlein, J. Vac. Sci. Technol. A 8, 1696 (1990).