Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 215, Issue 3-4, 2004, Pages 495-500

  Mangelinck, D ^a   Lee, P S ^b   Osipowitcz, T ^c   Pey, K L ^d  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Characterization; MOS; Rutherford backscattering spectrometry; Silicide; Sub micron devices

Indexed keywords

APPROXIMATION THEORY; CHARACTERIZATION; COMPUTER SIMULATION; DEPOSITION; INTERDIFFUSION (SOLIDS); MICROELECTRONICS; NICKEL COMPOUNDS; POLYSILICON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTRUM ANALYSIS; STOICHIOMETRY;

NON-UNIFORM LAYERS; SILICIDES; SUB-MICRON DEVICES;

MOS DEVICES;

EID: 0942267218     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.08.040     Document Type: Article

References (9)

1. Shaffner T.J. Proc. IEEE. 88(9):2000;1416.
2. Chu W., Mayer J.W., Nicolet M.A. Backscattering Spectrometry. 1978;Academic, New York.
3. Campisano S.U., Foti G., Grassi F., Rimini E. Thin Solid Films. 25(2):1975;431.
4. Mangelinck D., Correia A., Gas P., Grob A., Pichaud B. J. Appl. Phys. 78(3):1995;1638.
5. Gossla M., Metzner H., Hahn Th. Nucl. Instr. and Meth. B. 124(4):1997;567.
6. Baglin J.E.E., Tabacniks M.H., Kellock A.J. Nucl. Instr. and Meth. B. 136-138:1998;241.
7. Slotte J., Laakso A., Ahlgren T., Rauhala E., Salonen R., Räisänen J., Simon A., Uzonyi I., Kiss Á.Z., Somorjai E. J. Appl. Phys. 87(1):2000;140.
8. Doolittle L.R. Nucl. Instr. and Meth. B. 9:1985;344.
9. Lee P.S., Pey K.L., Mangelinck D., Ding J., Chi D.Z., Dai J.Y., Chan L. J. Electrochem. Soc. 149(6):2002;G331.