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Volumn 491, Issue 1-2, 2001, Pages 275-299

Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(100)

(3) Fehrenbacher, M a,b Rauscher, H a Behm, R J a

Author keywords

Chemical vapor deposition; Chemisorption; Epitaxy; Hydrides; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface chemical reaction; X ray photoelectron spectroscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ADSORPTION TEMPERATURE; LOW INDEX SINGLE CRYSTAL SURFACES; SATURATION EXPOSURE; SILYLENE GROUPS;

SILICON COMPOUNDS;

EID: 0842290490 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01417-0 Document Type: Article

Times cited : (4)

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