Ge x Si 1-x epitaxial layer growth and application to integrated circuits

Thin Films

Volumn 23, Issue C, 1997, Pages 1-82

  Greve, D W ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 73049109099     PISSN: 10794050     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S1079-4050(06)80012-8     Document Type: Chapter

References (242)

1. Kasper E., and Herzog H.-J. Thin Solid Films 44 (1977) 357
2. Bean J.C., Feldman L.C., Fiory A.T., Nakahara S., and Robinson I.K. J. Vac. Sci. Technol. A2 (1984) 436
3. Smith C., and Welbourn A.D. Proc. Bipolar Circuits and Technology Meeting (1987), IEEE, New York 57-60
4. Mertens R., Nijs J., Symons J., Baert K., and Ghannam M. Proc. Bipolar Circuits and Technology Meeting (1987), IEEE, New York 54-56
5. Iyer S.S., Patton G.L., Delage S.S., Tiwari S., and Stork J.M.C. 1987 International Electron Devices Meeting (1987), IEEE, New York 874-886
6. Iyer S.S., Patton G.L., Delage S.L., Tiwari S., and Stork J.M.C. In: Bean J.C., and Schowalter L.J. (Eds). Proc. 2nd Int'l. Symp. on Silicon MBE (1988), Electrochemical Society, Pennington, NJ 114-125
7. Patton G.L., Iyer S.S., Delage S.L., Tiwari S., and Stork J.M.C. IEEE Electron Device Letters EDL-9 (1988) 165-167
8. Temkin H., Bean J.C., Antreasyan A., and Leibenguth R. Appl. Phys. Lett. 52 (1988) 1089-1091
9. Tatsumi T., Hirayama H., and Aizaki N. Appl. Phys. Lett. 52 (1988) 895-897
10. Xu D.-X., Shen G.-D., Willander M., Ni W.-X., and Hansson G.V. Appl. Phys. Lett. 52 (1988) 2239-2241
11. Patton G.L., Harame D.L., Stork J.M.C., Meyerson B.S., Scilla G.J., and Ganin E. IEEE Electron Device Letters EDL-10 (1989) 534-536
12. King C.A., Hoyt J.L., Gronet C.M., Gibbons J.F., Scott M.P., and Turner J. IEEE Electron Device Letters EDL-10 (1989) 52-54
13. Bean J.C. Proc. IEEE 80 (1992) 571-587
14. Supplement 24. Jain S.C. Germanium-Silicon Strained Layers and Heterostructures. Advances in Electronics and Electron Physics (1994), Academic Press
15. In: Kasper E. (Ed). Properties of Strained and Relaxed Silicon Germanium. EMIS Data Reviews Series No. 12 (1995), INSPEC
16. Matthews J.W., and Blakeslee A.E. J. Cryst. Growth 27 (1974) 118
17. Robbins D.J., Canham L.T., Barnett S.J., Pitt A.D., and Calcott P. J. Appl. Phys. 71 (1992) 1407-1414
18. Lang D.V., People R., Bean J.C., and Sergen A.M. Appl. Phys. Lett. 47 (1985) 1333-1335
19. Braunstein R., Moore A.R., and Herman F. Phys. Rev. 109 (1958) 695
20. Houghton D.C. J. Appl. Phys. 70 (1991) 2136-2151
21. H. W. Appl. Phys. Lett. 5 (1964) 108
22. Kasper E., Kibbel H., and Schäffler F. J. Electrochem. Soc. 136 (1989) 1154-1158
23. Wright S., and Kroemer H. Appl. Phys. Lett. 36 (1980) 210
24. Tabe M. Jpn. J. Appl. Phys. 21 (1982) 534
25. Henderson R.C. J. Electrochem. Soc. 119 (1972) 772
26. Bean J.C., Becker G.E., Petroff P.M., and Seidel T.E. J. Appl. Phys. 48 (1977) 907
27. Kern W., and Puotinen D.A. RCA Review 31 (1970) 187
28. Blake J., Gelpely J.C., Moquin J.F., Schlueter J., and Capodilupo R. In: Wilson S.A., Powell R., and Davies D.W. (Eds). Proc. Sym. on Rapid Thermal Processing of Electronic Materials (1987), Materials Research Society, Pittsburgh, PA 265-272
29. Ishizaka A., and Shiraki Y. J. Electrochem. Soc. 133 (1986) 666
30. Fenner D.B., Biegelsen D.K., and Bringans R.D. J. Appl. Phys. 66 (1989) 419-424
31. Henderson R.C., Marcus R.B., and Polito W.J. J. Appl. Phys. 42 (1971) 1208
32. Eaglesham D.J., Higashi G.S., and Cerullo M. Appl. Phys. Lett. 59 (1991) 685-687
33. Meyerson B.S., Himpsel F.J., LeGoues F.K., and Wang P.J. Proc. 2nd Int'l. Conf. on Elec. Maters (1990), Materials Research Society, Pittsburgh, PA 469-475
34. Robbins D.J., et al. Thin Solid Films 183 (1989) 299-306
35. Allen F.G., Buck T.M., and Law J.T. J. Appl. Phys. 52 (1988) 486-488
36. Grunthaner P.J., Grunthaner F.J., Fathauer R.W., Lin T.L., Schowengerdt F.D., Pate R., and Mazur J.H. In: Bean J.C., and Schowalter L.J. (Eds). Proc. 2nd Int'l. Symp. on Silicon MBE (1988), Electrochemical Society, Pennington, NJ 375-391
37. Fukatsu S., Fujita K., Yaguchi H., Shiraki Y., and Ito R. Surf. Sci. 267 (1992) 79-82
38. Zalm P.C., and De Kruif R.C.M. Appl. Surf. Sci. 70/71 (1993) 73-78
39. Sakamoto K., Kyoya K., Miki K., Matsuhata H., and Sakamoto T. Jpn. J. Appl. Phys. Part 2: Letters 32 (1993) L204-L206
40. Dondl W., Lutjering G., Wegscheider W., Wilhelm J., Schorer R., and Abstreiter G. J. Cryst. Growth 127 (1993) 440-442
41. Copel M., Reuter M.C., Horn van Hoegen M., and Tromp R.M. Phys. Rev. B42 (1992) 11682-11689
42. Fukatasu S., Fujita K., Yaguchi H., Shiraki Y., and Ito R. In: Bean J.C., Iyer S.S., and Wang K.L. (Eds). Symposium on Silicon MBE (1991), Materials Research Society, Pittsburgh, PA 217-222
43. Becker G.E., and Bean J.C. J. Appl. Phys. 48 (1977) 3395
44. Ostrom R.M., and Allen F.G. Appl. Phys. Lett. 48 (1986) 221-223
45. Lin T.L., Fathauer R.W., and Grunthaner P.J. Thin Solid Films 184 (1990) 31-35
46. Tuppen C.G., Prior K.A., Gibbings C.J., Houghton D.C., and Jackman T.E. J. Appl. Phys. 64 (1988) 2751-2754
47. Kubiak R.A.A., Leong W.Y., and Parker E.H.C. In: Bean J.C., Iyer S.S., Kasper E., and Shiraki Y. (Eds). Proc. 1st Int'l. Symp. on Silicon MBE (1985), Electrochemical Society, Pennington, NJ 169-178
48. Parry C.P., Newstead S.M., Barlow R.D., Augustus P., Kubiak R.A.A., Dowsett M.G., Shall T.E., and Parker E.H.C. Appl. Phys. Lett. 58 (1991) 481-483
49. Lin T.L., George T., Jones E.W., Ksendzov A., and Huberman M.C. Appl. Phys. Lett. 60 (1992) 380-382
50. Jorke H., and Kibbel H. Appl. Phys. Lett. 57 (1990) 1763-1765
51. Zeindl H.P., Hammerl E., Kiunke W., and Eisele I. J. Electron Mater. 19 (1990) 1119-1122
52. Headrick R.L., Weir B.E., Levi A.F.J., Eaglesham D.J., and Feldman L.C. Appl. Phys. Lett. 57 (1990) 2779-2781
53. Metzger R.A., and Allen F.G. J. Appl. Phys. 55 (1984) 931
54. Markert L.C., Greene J.E., Ni W.-X., Hansson G.V., and Sundgren J.-E. Thin Solid Films 206 (1991) 59-63
55. Gossman H.-J., Schuber E.F., Eaglesham D.J., and Cerullo M. Appl. Phys. Lett. 57 (1990) 2440-2442
56. Ota Y. J. Electrochem. Soc. 126 (1979) 1761-1765
57. Jorke H., Herzog J.-J., and Kibbel H. Appl. Phys. Lett. 47 (1985) 511-513
58. Kubiak R.A.A., Leong W.Y., and Parker E.H.C. Appl. Phys. Lett. 46 (1985) 565-567
59. Alerhand O.L., Berker A.N., Joannopoulos J.D., Vnaderbilt D., Hamers R.J., and Demuth J.E. Phys. Rev. Lett. 64 (1990) 2406-2409
60. Chadi D.J. Phys. Rev. Lett. 59 (1987) 1691-1694
61. Unpublished image from Brian Swartzentruber, laboratory of Max Lagally, Univ. Wisconsin.
62. Elswijk H.B., Hoeven A.J., van Loenen E.J., and Dijkkamp D. J. Vac. Sci. Technol. B9 (1991) 451-456
63. Hamers R.J., Köhler U.K., and Demuth J.E. Ultramicroscopy 31 (1989) 10-19
64. Mo Y.-W., Köhler U.K., and Demuth J.E. Ultramicroscopy 31 (1989) 10-19
65. Mo Y.-W., and Lagally M.G. Surf. Sci. 248 (1991) 313-319
66. and references therein. Jorke H., Herzog H.-J., and Kibbel H. Phys. Rev. B40 (1989) 2005-2008
67. Eaglesham D.J., Gossman H.-J., and Cerullo M. Phys. Rev. Lett. 65 (1990) 1227-1230
68. Eaglesham D.J. J. Appl. Phys. 77 (1995) 3597-3617
69. Eaglesham D.J., Unterwald F.C., Luftman H., Adams D.P., and Yalisove S.M. J. Appl. Phys. 74 (1993) 6615-6618
70. Streit D., Metzger R.A., and Allen F.G. Appl. Phys. Lett. 44 (1984) 235-236
71. Pidduck A.J., Robbins D.J., Cullis A.G., Leong W.Y., and Pitt A.M. Thin Solid Films 222 (1992) 78-84
72. Spencer B.J., Voorhees P.W., and Davis S.H. Phys. Rev. Lett. 67 (1991) 3696-3699
73. Srolovitz D. Acta Met. 37 (1989) 621-625
74. Copel M., and Tromp R.M. Appl. Phys. Lett. 58 (1991) 2646-2650
75. Cullis A.G., Robbins D.J., Barnett S.J., and Pidduck A.J. J. Vac. Sci. Technol. A12 (1994) 1924-1931
76. Miller K.J., and Grieco M.J. J. Electrochem. Soc. 109 (1962) 70
77. Bean J.C., and Butcher P. In: Bean J.C., Iyer S.S., Kasper E., and Shiraki Y. (Eds). Proc. 1st Int'l. Symp. Si MBE (1985), Electrochemical Society, Pennington, NJ 427-435
78. Hirayama H., Tatsumi T., Ogura A., and Aizaki N. Appl. Phys. Lett. 51 (1987) 2213-2215
79. Hirayama H., Tatsumi T., and Aizaki N. Appl. Phys. Lett. 52 (1988) 1484-1486
80. Hirayama H., Hiroi M., Koyama K., and Tatsumi T. Appl. Phys. Lett. 56 (1990) 2645-2687
81. Suemitsu M., Hirose F., and Miyamato N. J. Cryst. Growth 107 (1991) 1015-1020
82. Bramblett T.R., Lu Q., Lee N.-E., Taylor N., Hasan M.-A., and Greene J.E. J. Appl. Phys. 77 (1995) 1504-1513
83. Li S.H., Bhattacharaya P.K., Malik R., and Gulari E. J. Electron. Mater. 22 (1993) 793-795
84. Meyerson B.S. Appl. Phys. Lett. 48 (1986) 797-799
85. Meyerson B.S., Himpsel F.J., and Uram K.J. Appl. Phys. Lett. 57 (1990) 1034-1036
86. B. S. Myerson, U.S. Patent 5 298 452 (1994).
87. Greve D.W., and Racanelli M. J. Vac. Sci. Technol. B8 (1990) 511-515
88. Vyas S., Greve D.W., Knight T.J., Strong R.M., and Mahajan S. Vacuum 46 (1995) 1065-1069
89. For example, see. Robbins D.J., Glasper J.L., Pidduck A.J., and Cullis A.G. Proc. 2nd Int'l. Conf. on Elec. Mater. (1990), Materials Research Society, Pittsburgh, PA 477-482
90. Sato F., Tatsumi T., Hashimoto T., and Toshiro T. IEEE Trans. Electron Devices ED-41 (1994) 1373-1378
91. Gibbons J.F., Gronet D.M., and Williams K.E. Appl. Phys. Lett. 47 (1985) 721-723
92. Sturm J.C., Schwartz P.V., Prinz E.J., and Manohara H. J. Vac. Sci. Technol. B9 (1991) 2011-2016
93. Lee S.C., Ku Y.H., and Kwong D.L. Appl. Phys. Lett. 54 (1989) 1775-1777
94. Jung K.H., Kim Y.M., and Kwong D.L. Appl. Phys. Lett. 56 (1990) 1775-1777
95. Sanganeria M., Violetta K.E., and Ozturk M.C. Proc. Rapid Thermal and Integrated Processing Symposium II (1993), Materials Research Society, Pittsburgh, PA 25-30
96. Dutartre D., Warren P., Berbezier I., and Perret P. Thin Solid Films 222 (1992) 52-56
97. Agnello P.D., Sedgwick T.O., Goorsky M.S., Ott J., Kuan T.S., and Scilla G. Appl. Phys. Lett. 59 (1991) 1479-1481
98. Meyer D., and Hawkins M. In: Huff H.R., Barraclough K.G., and Chikawa J. (Eds). Semiconductor Silicon 1990 (1990), Electrochemical Society, Pennington, NJ 282-290
99. Ibach H., and Rowe J.E. Surf. Sci. 43 (1974) 481
100. Cheng C.C., and Yates Jr. J.T. Phys. Rev. B43 (1991) 4041-4045
101. Chabal Y.J., and Raghavachari K. Phys. Rev. Lett 53 (1984) 282
102. Sinniah K., Sherman M.G., Lewis L.B., Weinberg W.H., Yates Jr. J.T., and Janda K.C. Phys. Rev. Lett. 62 (1989) 567-570
103. Sinniah K., Sherman M.F., Lewis L.B., Weinberg W.H., Yates Jr. J.T., and Janda K.C. J. Chem. Phys. 92 (1990) 5700-5711
104. Boland J.J. Phys. Rev. Lett. 67 (1991) 1539-1542
105. Wise M.L., Koehler B.G., Gupta P., Coon P.A., and George S.M. Surf. Sci. 258 (1991) 166-176
106. Greenlief C.M., and Liehr M. Appl. Phys. Lett. 64 (1994) 601-603
107. Eres G., and Sharp J.W. J. Vac. Sci. Technol. A11 (1993) 2463-2471
108. Cohen M., Yang Y.L., Rouchouze E., Jin T., and D'Evelyn M.P. J. Vac. Sci. Technol. A10 (1992) 2166-2171
109. Ning B.M.H., and Rowell J.E. Appl. Phys. Lett. 60 (1992) 2914-2916
110. Ning B.M.H., and Crowell C.R. Surf. Sci. 295 (1993) 79-98
111. Sharp J.W., and Eres G. Appl. Phys. Lett. 62 (1993) 2807-2809
112. Meyerson B.S., Uram K.J., and Le Goues F.K. Appl. Phys. Lett. 53 (1988) 2555-2557
113. Garone P.M., Sturm J.C., Schwartz P.V., Schwarz S.A., and Wilkens B.J. Appl. Phys. Lett. 56 (1990) 1275-1277
114. Robbins D.J., Glasper J.L., Cullis A.G., and Leong W.Y. J. Appl. Phys. 69 (1991) 3729-3732
115. and references therein. Gates S.M., Greenlief C.M., and Beach D.B. J. Chem. Phys. 93 (1990) 7493-7503
116. and references therein. Hirose F., Suemitsu M., and Miyamoto N. J. Appl. Phys. 70 (1991) 5380-5384
117. and references therein. Greve D.W. Mater. Sci. Eng. B18 (1993) 22-51
118. Russell N.M., and Breiland W.G. J. Appl. Phys. 73 (1993) 3525-3530
119. Fehrenbacher M., Spitzmüller J., Memmert U., Rauscher H., and Behm R.J. J. Vac. Sci. Technol. A14 (1996) 1499-1504
120. J. Spitzmüller, M. Fehrenbacher, H. Rauscher, and R. J. Behm (to be published).
121. Greenlief C.M., Wankum P.C., Klug D.-A., and Keeling L.A. J. Vac. Sci. Technol. A10 (1992) 2465-2469
122. Racanelli M., and Greve D.W. Appl. Phys. Lett. 56 (1990) 2524-2526
123. Tsai C., Jang S.-M., and Reif R. J. Appl. Phys. 69 (1991) 8158-8163
124. Mackay K.M. Hydrogen Compounds of, the metallic Elements (1966), E. & F. N. Spon, London 100-101
125. Yu M.L., Vitkavage D.J., and Meyerson B.S. J. Appl. Phys. 59 (1986) 4032
126. Greve D.W., and Racanelli M. J. Electron. Mater. 21 (1992) 593-597
127. Meyerson B.S., LeGoues F.K., Nguyen T.N., and Harame D.L. Appl. Phys. Lett. 50 (1987) 113-115
128. Meyerson B.S. IBM J. Res. Develop. 34 (1990) 806-815
129. Strong R., Greve D.W., and Weeks M.M. In: Fitzgerald E.A., Hoyt J., Cheng K.-Y., and Bean J.C. (Eds). Proc. Symp. Silicide Thin Films: Fabrication, Properties, and Applications (1995), Materials Research Society, Pittsburgh, PA 339-344
130. Meyerson B.S., and Yu M.L. J. Electrochem Soc. 131 (1984) 2366
131. Maity N., Xia L.-Q., and Engstrom J.R. Appl. Phys. Lett. 66 (1995) 1909-1911
132. Wang Y., Chen X., and Hamers R.J. Phys. Rev. B50 (1994) 4534-4547
133. Greve D.W., and Racanelli M. J. Electrochem Soc. 138 (1991) 1744-1748
134. Jang S.-M., Liao K., and Reif R. J. Electrochem. Soc. 142 (1995) 3520-3527
135. Harame D.L., Meyerson B.S., Crabbé E.F., Stanis C.L., Cotte J.M., Stork J.M.C., Megdanis A.C., Patton G.L., Stiffler S.R., Johnson J.B., Warnock J.C., Comfort J.H., and Sun J.Y.C. 1991 Symp. on VLSI Technology Digest of Technical Papers (1991), IEEE, New York 71-72
136. D. L. Harame, J. M. C. Stork, B. S. Meyerson, E. F. Crabbé, G. J. Scilla, E. de Frésart, A. E. Megdanis, C. L. Stanis, G. L. Patton, J. H. Comfort, A. A. Bright, J. B. Johnson, and S. S. Furkay, IEDM Technical Digest 1990, pp. 33-36, IEEE, Piscataway, NJ.
137. Koleske D.D., Gates S.M., and Beach D.B. Appl. Phys. Lett. 61 (1992) 1802-1804
138. Coon P.A., Gupta P., Wise M.L., and George S.M. J. Vac. Sci. Technol. A10 (1992) 324-333
139. Koehler B.G., Mak C.H., Arthur D.A., Coon P.A., and George S.M. J. Chem. Phys. 89 (1988) 1709-1718
140. Wise M.L., Koehler B.G., Gupta P., Coon P.A., and George S.M. Surf Sci. 258 (1991) 166-176
141. For example, see. Boudart M., and Djéga-Mariadassou G. Kinetics of Heterogenous Catalytic Reactions (1984), Princeton University Press, Princeton, NJ
142. Greve D.W. Proc. of the Symp. on Common Themes and Mechanisms of Epitaxial Growth (1993), Materials Research Society, Pittsburgh, PA 237-242
143. Jang S.-M., and Reif R. Appl. Phys. Lett. 59 (1991) 3162
144. Agnello P.D., Sedgwick T.O., Bretz K.C., and Kuan T.S. Appl. Phys. Lett. 61 (1992) 1298-1300
145. Coon P.A., Wise M.L., and George S.M. J. Cryst. Growth 130 (1993) 162-172
146. Hierlemann M., Kersch A., Werner C., and Schäfer H. J. Electrochem. Soc. 142 (1995) 259-266
147. Kamins T.I., and Meyer D.J. Appl. Phys. Lett. 61 (1992) 90-92
148. Agnello P.D., Sedgwick T.O., and Cotte J. J. Electrochem. Soc. 140 (1993) 2703-2709
149. Sedgwick T.O., Grützmacher D.A., Zaslavsky A., and Kesan V.P. J. Vac. Sci. Technol. B11 (1993) 1124-1128
150. Sedgwick T.O., and Grützmacher D.A. J. Electrochem. Soc. 142 (1995) 2458
151. Sakai A., and Tatsumi T. Appl. Phys. Lett. 64 (1994) 52-54
152. Grützmacher D.A., Sedgwick T.O., Powell A., Tejwani M., Iyer S.S., Cotte J., and Cardone F. Appl. Phys. Lett. 63 (1993) 2531-2533
153. Suda Y., Lubben D., Motooka T., and Greene J.E. J. Vac. Sci. Technol. A8 (1990) 61-67
154. Kulkarni S.K., Gates S.M., Scott B.A., and Sawin H. Surf. Sci. 239 (1990) 13-24
155. Butzke S., Werner K., Trommel J., Radelaar S., and Balk P. Thin Solid Films 228 (1993) 27-31
156. Ghidini G., and Smith F.W. J. Electrochem. Soc. 131 (1984) 2924-2928
157. Racanelli M., Greve D.W., Hatalis M.K., and van Ÿzendoorn L.J. J. Electrochem. Soc. 138 (1991) 3783-3789
158. Yamazaki T., Miyata N., Aoyama T., and Ito T. J. Electrochem. Soc. 139 (1992) 1175-1180
159. and references therein. Chabal Y.J. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symposium on Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh, PA 349-360
160. Raider S.I., Flitsch R., and Palmer M.J. J. Electrochem. Soc. 122 (1975) 413
161. Yablonovich E., Allara D.L., Chang C.C., Gmitter T., and Bright T.B. Phys. Rev. Lett. 57 (1986) 249
162. Hung L.S., Lau S.S., von Allmen M., Mayer J.W., Ullrich B.M., Baker J.E., Williams P., and Tseng W.F. Appl. Phys. Lett. 37 (1980) 909-911
163. Takahagi T., Nagai I., Ishitani A., Kuroda H., and Nagasawa Y. J. Appl. Phys. 64 (1988) 3516-3521
164. Banerjee S., Tasch A., Hsu T., Qian R., Kinosky D., Irby J., Mahajan A., and Thomas S. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symp. on Chemical Surface Preparation, Passivation, and Cleaning for Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh, PA 43-54
165. Fitch J.T., and Denning D.J. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symp. on Chemical Surface Preparation, Passivation, and Cleaning for Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh PA 487-492
166. Hirashita N., Kinoshita M., Aikawa I., and Ahioka T. Semiconductor Silicon 1990 (1990), Electrochemical Society, Pennington, NJ 313-317
167. Chabal Y.J., Higashi G.S., Ragahavachari K., and Burrows V.A. J. Vac. Sci. Technol. A7 (1989) 2104-2109
168. Miyauchi A., Inoue Y., Suzuki T., and Akiyama M. Appl. Phys. Lett. 57 (1990) 676-677
169. Morita M., Ohmi T., Hasegawa E., Kawakami M., and Ohwada M. J. Appl. Phys. 68 (1990) 1272-1281
170. Sanganeria M.K., Öztürk M.C., Harris G., Violette K.E., Ban I., Lee C.A., and Maher D.M. J. Electrochem Soc. 142 (1995) 3961-3969
171. Iyer S.S., Arienzo M., and de Frésart E. Appl. Phys. Lett. 57 (1990) 893-895
172. Deal B.E., and Helms D.R. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symposium on Chemical Surface Preparation, Passivation, and Cleaning for Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh, PA 361-373
173. D'Emic C.P., Blum J., Cohen S., Baseman R., D'Agostino M., Cardone F., and Rothman L. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symp. on Chemical Surface Preparation, Passivation, and Cleaning for Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh, PA 479-485
174. Dumas P., Chabal Y.J., and Higashi G.S. Phys. Rev. Lett. 65 (1990) 1124
175. Tejwani M.J., and Ronsheim P.A. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symp. on Chemical Surface Preparation, Passivation, and Cleaning for, Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh, PA 467-472
176. D'Emic C.P., Blum J., Cohen S., Baseman R., D'Agostino M., Cardone F., and Rothman L. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symp. on Chemical Surface Preparation, Passivation, and Cleaning for Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh PA 479-485
177. Cohen S.L., Blum J., D'Emic C., Gilbert M., Cardone F., Stanis C., and Liehr M. In: Nemanich R.J., Helms C.R., Hirose M., and Rubloff G.W. (Eds). Proc. Symp. on Chemical Surface Preparation, Passivation, and Cleaning for Semiconductor Growth and Processing (1992), Materials Research Society, Pittsburgh, PA 499-504
178. Agnello P.D., and Sedgwick T.O. J. Electrochem. Soc. 139 (1992) 2929-2934
179. Agnello P.D., and Sedgwick T.O. J. Electrochem. Soc. 139 (1992) 1140-1146
180. Sedgwick T.O., Agnello P.D., and Grützmacher D.A. J. Electrochem. Soc. 140 (1993) 3684-3688
181. Bender H., Verhaverbeke S., Caymax M., Vatel O., and Heyns M.M. J. Appl. Phys. 75 (1994) 1207-1209
182. Robbins D.J., Pidduck A.J., Glasper J.L., and Young I.M. Appl. Phys. Lett. 55 (1989) 1229-1231
183. Robbins D.J., Pidduck A.J., Glasper J.L., Young I.M., and Pickering C. Thin Solid Films 183 (1989) 299-306
184. U.S. Patent 2 569 347. Shockley W. Circuit Element Using Semiconductor Materials (1951)
185. Schreiber H.-U., Bosch B.G., Kasper E., and Kibbel H. Electron. Lett. 25 (1989) 185-186
186. Ghani T., Hoyt J.L., Noble D.B., Gibbons J.F., Turner J.E., and Kamins T.I. Appl. Phys. Lett. 58 (1991) 1317-1319
187. Prinz E.J., Garone P.M., Schwartz P.V., Xiao X., and Sturm J.C. Proc. 1989 IEDM (1989), IEEE, New York 639-642
188. Prinz E.J., Garone P.M., Schwartz P.V., Xiao X., and Sturm J.C. IEEE Electron Device Letters EDL-12 (1991) 42-44
189. Patton G.L., Comfort J.H., Meyerson B.S., Crabbé E.F., Scilla G.J., de Frésart E., Stork J.M.C., Sun J.Y.-C., Harame D.L., and Burghartz J.N. IEEE Electron Device Letters EDL-11 (1990) 171-173
190. Higashi G.S., Bean J.C., Buescher C., Yadvish R., and Temkin H. Appl. Phys. Lett. 56 (1990) 2560-2562
191. Delage S.L., Iyer S.S., and Scilla G.J. In: Bean J.C., and Schowalter L.J. (Eds). Proc. 2nd Conf. Si MBE (1988), Electrochemical Society, Pennington, NJ 459-469
192. Gravesteijn D.J., Pruijmboom A., Kertsten W.J., van Rooij-Mulder J.M.L., Reader A.H., and Slotboom J. Thin Solid Films 222 (1992) 132-136
193. also see. Schreiber H.-U. Electron Lett. 28 (1992) 485-487
194. Gruhle A. In: Luy J.-F., and Russer P. (Eds). Silicon-based Millimetre-wave devices (1994), Springer Verlag, Berlin 149
195. Schrieber H.-U., Albers J.N., and Bosch B.G. Electron. Lett. 29 (1993) 2185-2187
196. Schüppen A., Gruhle A., Erben U., Kibbel H., and König U. Proc. 1994 IEDM (1994), IEEE, New York 377-380
197. Schüppen A., Gruhle A., Erben U., Kibbel H., and König U. Proc. 1989 IEDM (1994), IEEE, New York 639-642
198. Kasper E., Kibbel H., Herzog H.-J., and Gruhle A. Jpn. J. Appl. Phys. 33 (1994) 2415-2418
199. Gruhle A., Kibbel H., and Speck R. Proc. EuMC Conf. Cannes (1994) 648
200. Erben U., Gruhle A., Schüppen A., Kibbel H., and König U. Electron. Lett. 30 (1994) 525-527
201. Schüppen A., Erben U., Gruhle A., Kibbel H., Schumacher H., and König U. Proc. IEDM 1995 (1995), IEEE, New York 743-746
202. Harame D.L., Comfort J.H., Cressler J.D., Crabbé E.F., Sun J.Y.-C., Meyerson B.S., and Tice T. IEEE Trans. Electron Dev. ED-42 (1995) 455-468
203. Harame D.L., Comfort J.H., Cressler J.D., Crabbé E.F., Sun J.Y.-C., Meyerson B.S., and Tice T. IEEE Trans. Electron Dev. ED-42 (1995) 469-482
204. Hong M., de Frésart E., Steele J., Zlotnicka A., Stein C., Tam G., Racanelli M., Knoch L., See Y.-C., and Evans K. IEEE Electron Device Letters EDL-14 (1993) 450-452
205. Racanelli M., and Greve D.W. Appl. Phys. Lett. 58 (1991) 2096-2098
206. Ganin E., Chen T.C., Stork J.M.C., Meyerson B.S., Cressler J.D., Scilla G., Warnock J., Harame D.L., Patton G.L., and Ning T.H. Proc. 1990 IEDM (1990), IEEE, New York 603-606
207. Sato F., Hashimoto T., Tatsumi T., Kitahata H., and Tashiro T. IEDM (1992), IEEE, New York 397-400
208. Sato F., Hashimoto T., Tatsumi T., and Tashiro T. IEEE Trans. Electron Dev. ED-42 (1995) 483-488
209. Harame D.L., Crabbé E.F., Cressler J.D., Comfort J.H., Sun J.Y.-C., Stiffler S.R., Kobeda E., Burghartz J.N., Gilbert M.M., Malinowski J.C., Dally A.J., Ratanaphanyarat S., Saccamango M.J., Rausch W., Cotte J., Chu C., and Stork J.M.C. Proc. 1992 IEDM (1992), IEEE, New York 19-22
210. Harame D.L., Comfort J.H., Cressler J.D., Crabbé E.F., Sun J.Y.-C., Meyerson B.S., and Tice T. IEEE Trans. Electron. Dev. ED-42 (1995) 469-482
211. E. J. Prinz and J. C. Sturm, IEDM 1991 pp. 853-856;
212. Prinz E.J., and Sturm J.C. IEEE Electron Device Letters EDL-12 (1991) 661-663
213. Harame D.L., Comfort J.H., Cressler J.D., Crabbé E.F., Sun J.Y.-C., Meyerson B.S., and Tice T. IEEE Trans. Electron Dev. ED-42 (1995) 455-468
214. D. L. Harame, J. M. C. Stork, B. S. Meyerson, K. Y. J. Hsu, J. Cotte, K. A. Jenkins, J. D. Cressler, P. Restle, E. F. Crabbé, S. Subbanna, T. Tice, B. W. Scharf, and J. A. Yasaitis, "Proc. 1993 IEDM," pp. 874-876.
215. Ng C.C., and Yang E.S. Proc. 1986 IEDM (1986), IEEE, New York 32-35
216. Crabbé E.F., Comfort J.H., Cressler J.D., Sun J.Y.-C., and Stork J.M.C. IEEE Electron. Device Letters EDL-14 (1993) 478-480
217. Cressler J.D., Comfort J.H., Crabbé E.F., Sun J.Y.-C., and Stork J.M.C. 1992 Symposium on VLSI Tech. Dig. (1992), IEEE, New York 102-103
218. Cressler J.D., Comfort J.H., Crabbe E.F., Patton G.L., Stork J.M.C., Sun J.Y.-C., and Meyerson B.S. IEEE Trans. Electron Dev. ED-40 (1993) 525-541
219. Comfort J.H., Crabbé E.F., Cressler J.D., Lee W., Sun J.Y.-C., Malinowski J., D'Agostino M., Burghartz J.N., Stork J.M.C., and Meyerson B.S. Proc. 1991 IEDM (1991), IEEE, New York 857-860
220. Semiconductor International (March, 1994) 22
221. Abstreiter G., Bruger H., Wolf T., Jorke H., and Herzog H.-J. Phys. Rev. Lett. 54 (1985) 2441
222. People R., Bean J.C., Lang D.V., Sergent A.M., Stormer H.L., Wecht K.W., Lynch R.T., and Baldwin K. Appl. Phys. Lett. 45 (1984) 1231
223. Xie Y.H., Fitzgerald E.A., Monroe D., Silverman P.J., and Watson G.P. J. Appl. Phys. 73 (1993) 8364
224. Schaffler F., Tobhen D., Herzog H.-J., Abstreiter G., and Hollander B. Semi. Sci. Technol. 7 (1992) 260
225. Xie Y.H., Monroe D., Fitzgerald E.A., Silverman P.J., Thiel F.A., and Watson G.P. Appl. Phys. Lett. 63 (1993) 2263
226. Pearsall T.P., and Bean J.C. IEEE Electron Device Letters EDL-7 (1986) 308
227. Daembkes H., Herzog H.-J., Jorke H., Kibbel H., and Kasper E. IEEE Trans. Electron Dev. ED-33 (1986) 633
228. Ismail K., Meyerson B.S., Rishton S., Chu J., Nelson S., and Nocera J. IEEE Electron Dev. Lett. EDL-13 (1992) 229
229. Nelson S.F., Ismail K., Jackson T.N., Nocera J.J., Chu J.O., and Meyerson B.S. Appl. Phys. Lett. 63 (1993) 794
230. Hsu J.W., Fitzgerald E.A., Xie Y.H., Silverman P.J., and Cardillo M.J. Appl. Phys. Lett. 61 (1992) 1293
231. and references therein. Eugène J., LeGoues F.K., Kesan V.P., Iyer S.S., and d'Heurle F.M. Appl. Phys. Lett. 59 (1990) 78-80
232. Racanelli M., and Greve D.W. Proc. IEEE/Cornell Conference on Advanced Concepts on High Speed Semiconductor Devices and Circuits (1989), IEEE, New York 150-159
233. Hinckley J.M., Sankaran V., Singh J., and Tiwari S. Proc. IEEE/Cornell Conference on Advanced Concepts on High Speed Semiconductor Devices and Circuits (1989), IEEE, New York 141-149
234. Hinckley J.M., Sankaran B., and Singh J. Appl. Phys. Lett. 55 (1989) 2008-2010
235. Hinckley J.M., and Singh J. Phys. Rev. B41 (1990) 2912-2926
236. McGregor J.M., Manku T., Noël J.P., Roulston D.J., Nathan A., and Houghton D.C. J. Electron. Mater. 22 (1993) 319-321
237. and references therein. Tsividis Y. Operation and Modeling of the MOS Transistor (1987), McGraw-Hill 141-148
238. Nayak D.K., Woo J.C.S., Park J.S., Wang K.-L., and MacWilliams K.P. IEEE Electron Device Letters EDL-12 (1991) 154-156
239. Verdonet-Vandebrock S., Crabbé E.F., Meyerson B.S., Harame D.L., Restle P.J., Stork J.M.C., Megdanis A.C., Stanis C.L., Bright A.A., Kroesen G.M.W., and Warren A.C. IEEE Electron Device Letters EDL-12 (1991) 447-449
240. Garone P.M., Venkataraman V., and Sturm J.C. IEEE Electron Device Letters EDL-13 (1992) 56-58
241. Nayak D.K., Woo J.C.S., Yabiku G.K., MacWilliams K.P., Park J.S., and Wang K.L. IEEE Electron Device Letters EDL-14 (1993) 520-522
242. Verdonckt-Vandebrock S., Crabbé E.F., Meyerson B.S., Harame D.L., Restle P.J., Stork J.M.C., and Johnson J.B. IEEE Trans. Electron Dev. ED-41 (1994) 90-111