Design of a 20 nm T-gate MOSFET with a Source/Drain-to-Gate Non-Overlapped Structure

Journal of the Korean Physical Society

Volumn 44, Issue 1, 2004, Pages 65-68

  Lee, Hyunjin ^a   Shin, Hyungcheol ^b   Lee, Jongho ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Seoul National University   (South Korea)

^c Kyungpook National University   (South Korea)

Author keywords

MOSFETs; Non overlap; Propagation delay time; Scaling

Indexed keywords

EID: 0842264186     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (9)

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2. Hyunjin Lee, Sung-il Chang, Jongho Lee and Hyungcheol Shin, J. Korean Phys. Soc. 41, 937 (2002).
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4. Sung-il Chang, Jongho Lee and Hyungcheol Shin, Silicon Nanoelectronics Workshop (Kyoto, June, 2001), p. 70.
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