A reduced intermodulation distortion tunable ferroelectric capacitor - architecture and demonstration

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 12, 2003, Pages 2568-2576

  Yoon, Yong Kyu ^a   Kim, Dongsu ^a   Allen, Mark G ^a   Kenney, J Stevenson ^a   Hunt, Andrew T ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b MicroCoating Technologies   (United States)

Author keywords

Barium strontium titanate (BST); Ferroelectric tunable capacitor; Input third order intermodulation intercept point (IIP3); Q factor; Reduced intermodulation distortion (IMD)

Indexed keywords

BARIUM COMPOUNDS; DEGREES OF FREEDOM (MECHANICS); ELECTRIC RESISTANCE; ELECTRODES; FERROELECTRIC MATERIALS; INTERMODULATION; PERMITTIVITY; Q FACTOR MEASUREMENT; TUNING;

ATTACHED BIAS ELECTRODE; BARIUM STRONTIUM TITANATE; FERROELECTRIC TUNABLE CAPACITOR; INPUT THIRD ORDER INTERMODULATION INTERCEPT POINT; REDUCED INTERMODULATION DISTORTION;

CAPACITORS;

EID: 0742304082     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.820168     Document Type: Article

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