Microwave integrated circuits using thin-film BST

IEEE International Symposium on Applications of Ferroelectrics

Volumn 1, Issue , 2000, Pages 195-200

  York, R ^a   Nagra, A ^a   Erker, E ^a   Taylor, T ^a   Periaswamy, P ^a   Speck, J ^a   Streiffer, S ^a   Auciello, O ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; ELECTRIC BREAKDOWN; FILM GROWTH; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERMITTIVITY; PHASE SHIFTERS; Q FACTOR MEASUREMENT; VARACTORS;

BARIUM STRONTIUM TANTALUM OXIDES; FAST POLARIZATION RESPONSE; FIELD DEPENDENT PERMITTIVITY; FREQUENCY MULTIPLICATION DEVICES; HIGH BREAKDOWN FIELD; MONOLITHIC MICROWAVE INTEGRATED CAPACITORS;

FERROELECTRIC THIN FILMS;

EID: 0034470573     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. 3 dielectrics for future stacked-capacitor DRAM
2. Planar microwave integrated phase-shifter design with high purity ferroelectric material
3. GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling
4. Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics
5. Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360° phase shift at 20 GHz
6. Distributed analog phase shifters with low insertion loss
7. Realization of high tunability barium strontium titanate thin films by RF magnetron sputtering
8. Optimization of RF sputtered barium strontium titanate (BST) thin films for high tunability
9. First demonstration of a periodically loaded line phase shifter using BST capacitors