-
2
-
-
0026385721
-
A 40 GHz band monolithic even harmonic mixer with antiparallel an diode pair
-
1991 IEEE MTT-S Int., Microwave Symp., Digest
-
K. Itoh, Y. Sasaki, A. Iida, S. Urasaki, A 40 GHz band monolithic even harmonic mixer with an antiparallel diode pair, in: 1991 IEEE MTT-S Int., Microwave Symp., Digest, 1991, pp. 879-883
-
(1991)
, pp. 879-883
-
-
Itoh, K.1
Sasaki, Y.2
Iida, A.3
Urasaki, S.4
-
3
-
-
84897477397
-
Low LO power V-band CPW mixer using GaAs PHEMT
-
D. An, B.H. Lee, Y.S. Chae, H.M. Park, H.C. Park, J.K. Rhee, Low LO power V-band CPW mixer using GaAs PHEMT, in: 32nd European Microwave Conference 2002, vol. 2, 2002, pp. 773-776
-
(2002)
32nd European Microwave Conference 2002
, vol.2
, pp. 773-776
-
-
An, D.1
Lee, B.H.2
Chae, Y.S.3
Park, H.M.4
Park, H.C.5
Rhee, J.K.6
-
4
-
-
0020766010
-
High-Frequency doubler operation of GaAs field-effect transistors
-
MTT-31
-
Rauscher C. High-Frequency doubler operation of GaAs field-effect transistors IEEE Trans. Microwave Theory Tech. MTT-31 6 1983 462-472
-
(1983)
IEEE Trans. Microwave Theory Tech.
, Issue.6
, pp. 462-472
-
-
Rauscher, C.1
-
5
-
-
0742302461
-
Integrated quardrupler circuit in coplanar technology for 60 GHz wireless applications. Microwave symposium fabrication of a low-noise amplifier for the V-band
-
Schefer M. Integrated quardrupler circuit in coplanar technology for 60 GHz wireless applications. Microwave symposium fabrication of a low-noise amplifier for the V-band J. Korean Phys. Soc. 41 4 2002 533-538
-
(2002)
J. Korean Phys. Soc.
, vol.41
, Issue.4
, pp. 533-538
-
-
Schefer, M.1
-
6
-
-
0038592149
-
Precise control of strain field for the selective formation of self-assembled InAs/GaAs quantum dots
-
Park Y.J. Kim K.M. Park Y.M. Kim E.K. Precise control of strain field for the selective formation of self-assembled InAs/GaAs quantum dots Current Appl. Phys. 1 2-3 2001 187-190
-
(2001)
Current Appl. Phys.
, vol.1
, Issue.2-3
, pp. 187-190
-
-
Park, Y.J.1
Kim, K.M.2
Park, Y.M.3
Kim, E.K.4
-
7
-
-
0036070060
-
The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device
-
Son K.S. Choi D.L. Lee H.N. Lee W.G. The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device Current Appl. Phys. 2 3 2002 229-232
-
(2002)
Current Appl. Phys.
, vol.2
, Issue.3
, pp. 229-232
-
-
Son, K.S.1
Choi, D.L.2
Lee, H.N.3
Lee, W.G.4
-
8
-
-
0035981414
-
Design and fabrication of a low-noise amplifier for the V-band
-
Kang T.-S. Lee S.-D. Lee B.-H. Kim S.-D. Park H.-C. Park H.-M. Rhee J.-K. Design and fabrication of a low-noise amplifier for the V-band J. Korean Phys. Soc. 41 4 2002 533-538
-
(2002)
J. Korean Phys. Soc.
, vol.41
, Issue.4
, pp. 533-538
-
-
Kang, T.-S.1
Lee, S.-D.2
Lee, B.-H.3
Kim, S.-D.4
Park, H.-C.5
Park, H.-M.6
Rhee, J.-K.7
-
9
-
-
0036454432
-
Sub 0.1 μm asymmetric Γ-gate PHEMT process using electron beam lithography
-
Sul W.S. Shin D.H. Rhee J.K. Sub 0.1 μm asymmetric Γ-gate PHEMT process using electron beam lithography Mater. Res. Soc. Symp. Proc. 720 2002 H3.11.1-H3.11.6
-
(2002)
Mater. Res. Soc. Symp. Proc.
, vol.720
-
-
Sul, W.S.1
Shin, D.H.2
Rhee, J.K.3
-
10
-
-
0742285137
-
Effects of He gas on hydrogen contents and passivation of GaAs PHEMT with SiN films
-
Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, 2000 Digest 121-124
-
J.W. Shin, Y.S. Soon, S.D. Lee, H.C. Park, J.K. Rhee, Effects of He gas on hydrogen contents and passivation of GaAs PHEMT with SiN films, in: Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, 2000 Digest, pp. 121-124, 2002 IEEE MTT-S International, vol. 1, 2002, pp. 355-358
-
(2002)
2002 IEEE MTT-S International
, vol.1
, pp. 355-358
-
-
Shin, J.W.1
Soon, Y.S.2
Lee, S.D.3
Park, H.C.4
Rhee, J.K.5
-
11
-
-
0035692489
-
A family of Q, V and W-band monolithic resistive mixers
-
M. Kimishima, T. Ataka, H. Okabe, A family of Q, V and W-band monolithic resistive mixers, in: 2001 IEEE MTT-s Digest, pp. 115-118
-
(2001)
IEEE MTT-s Digest
, pp. 115-118
-
-
Kimishima, M.1
Ataka, T.2
Okabe, H.3
-
14
-
-
0035966989
-
SSB MMIC mixer with subharmonic LO and CPW circuits for 38 GHz band applications
-
Fujishiro H.I. Ogawa Y. Hamada T. Kimura T. SSB MMIC mixer with subharmonic LO and CPW circuits for 38 GHz band applications Electron. Lett. 37 7 2001 435-436
-
(2001)
Electron. Lett.
, vol.37
, Issue.7
, pp. 435-436
-
-
Fujishiro, H.I.1
Ogawa, Y.2
Hamada, T.3
Kimura, T.4
-
15
-
-
0031632469
-
Fully integrated Q-band MMIC transmitter and receiver chips using resistive PHEMT mixers
-
S. Nam, T. Gokdemir, A.H. Baree, I.D. Robertson, A.D. Plews, M.J. Howes, C.M. Snowden, J.G. Leckey, A.D. Patterson, J.A.C. Stewart, Fully integrated Q-band MMIC transmitter and receiver chips using resistive PHEMT mixers, in: IEEE Radio Frequency Integrated Circuits Symposium, 1998, pp. 279-282
-
(1998)
IEEE Radio Frequency Integrated Circuits Symposium
, pp. 279-282
-
-
Nam, S.1
Gokdemir, T.2
Baree, A.H.3
Robertson, I.D.4
Plews, A.D.5
Howes, M.J.6
Snowden, C.M.7
Leckey, J.G.8
Patterson, A.D.9
Stewart, J.A.C.10
-
16
-
-
0031623850
-
A Ka-band monolithic single-chip transceiver using sub-harmonic mixer
-
Y.L. Kok, M. Ahmadi, H. Wang, B.R. Allen, T. Line, A Ka-band monolithic single-chip transceiver using sub-harmonic mixer, in: 1998 IEEE MTT-s Digest, pp. 309-311
-
(1998)
IEEE MTT-s Digest
, pp. 309-311
-
-
Kok, Y.L.1
Ahmadi, M.2
Wang, H.3
Allen, B.R.4
Line, T.5
|