A family of Q, V and W-band monolithic resistive mixers

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 115-118

  Kimishima, Masayuki ^a   Ataka, Tsuyoshi ^a   Okabe, Hideyuki ^a  

^a ADVANTEST CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; FREQUENCY RESPONSE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; MICROSTRIP LINES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

CONVERSION LOSS; DRAIN VOLTAGE; FREQUENCY BAND; LANGE COUPLERS; LOSS FLATNESS; MONOLITHIC RESISTIVE MIXERS;

MIXER CIRCUITS;

EID: 0035692489     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. High performance resistive EHF mixers using InGaAs HEMTs
2. Monolithic dual-quadrature mixer using GaAs FETs
3. A Q-band monolithic balanced resistive HEMT mixer using CPW/slotline balun
4. A double balanced 3-18 GHz resistive HEMT monolithic mixer
5. Monolithic circuits for 60 GHz communication systems using pseudomorphic HEMT process
6. 50-100 GHz octave band MMIC mixers