Sub 0.1 μm asymmetric Γ-gate PHEMT process using electron beam lithography

Materials Research Society Symposium - Proceedings

Volumn 720, Issue , 2002, Pages 85-90

  Sul, W S ^a   Shin, D H ^a   Rhee, J K ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; FREQUENCIES; GATES (TRANSISTOR); OSCILLATIONS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE;

GATE FINGERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036454432     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-720-h3.11     Document Type: Conference Paper

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