A simplified 2-d analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1314-1315

  Cao, J Gene ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; BOUNDARY VALUE PROBLEMS; FOURIER TRANSFORMS; GREEN'S FUNCTION; LAPLACE TRANSFORMS; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

THRESHOLD VOLTAGE; TWO DIMENSIONAL POISSON EQUATION;

MESFET DEVICES;

EID: 0030216789     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506788     Document Type: Article

References (1)

1. C.-S. Hou and C.-Y. Wu, "A 2-D analytic model for the thresholdvoltage of fully depleted short gate-length Si SOI MESFET's," IEEE Trans. Electron Devices, vol. 42, no. 12, pp. 2156-2162, Dec. 1995.