Anisotropic misfit strain relaxation in thin epitaxial layers

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 289-294

  Domagala, J ^a   Bak Misiuk J ^a   Adamczewska, J ^a   Zytkiewicz, Z R ^a   Dynowska, E ^a   Trela, J ^a   Dobosz, D ^a   Janik, E ^a   Leszczynski M ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; THIN FILMS;

HIGH-RESOLUTION X RAY DIFFRACTOMETRY; MISFIT STRAIN RELAXATION; RECIPROCAL LATTICE MAPPING; X RAY ROCKING CURVE TECHNIQUE;

HETEROJUNCTIONS;

EID: 0032756492     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<289::AID-PSSA289>3.0.CO;2-2     Document Type: Article

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