Vertical silicon MOSFETs based on selective epitaxial growth

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 67-70

  Moers, J ^a   Tonnesmann A ^a   Klaes, D ^a   Vescan, L ^a   Van Der Hart, A ^a   Fox, A ^a   Mars, M ^a   Kordos P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EPITAXIAL GROWTH; GATES (TRANSISTOR); MICROSYSTEMS; SEMICONDUCTOR DEVICES;

DC CHARACTERISTICS; DEVICE CHARACTERISTICS; LOW PRESSURE CHEMICAL VAPOUR DEPOSITIONS; PARASITIC CAPACITANCE; RF PERFORMANCE; SELECTIVE EPITAXIAL GROWTH; SUBTHRESHOLD SLOPE; VERTICAL MOSFETS;

MOSFET DEVICES;

EID: 0442283470     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889454     Document Type: Conference Paper

References (7)

1. Ono, M., Saito, M., Yoshitomi, T., Fiegna, C, Ohguro, T., Iwai, H.: IEEE Trans, on Electron Devices, October 1995, 42(10), 1822-1830
2. Mii, Y., Taur, Y., Kern, D., Lii, T., Lee, K., Jenkins, K.A., Quinlan, D., Brown Jr., T., Danner, D., Sewell, F., Polcari, M.: IEEE Electron Device Lett., January 1994, 15(1), 28-30
3. Risch, L., Krautschneider, W.H., Hofmann, F., Schäfer, H., Aeugle, T., Rösner, W.: IEEE Trans. Electron Devices, September 1996, 43(9), 1495-1498
4. Moers, J., Klaes, D., Tönnesmann, A., Wickenhäuser, S., Vescan, L., Marso, M., Kordoš P., Lüth, H.,Grabolla, T.:Solid-State Electronics 43 (1999) 529-535
5. Ishitani, A., Kitajima, N., Endo, N., Kasai, N.: J.J. Appl. Phys. 28(5) (1989) 841
6. Wann, C.H., Noda, K., Tanaka, T., Yoshida, M., Hu, C: IEEE Transactions on Electronic Devices, 43(10) (1996) pp 1742
7. Taur, Y., Buchanan, D.A., Chen, W., Frank, D.J., Ismail, K.E., Lo, S.H., Sai-Halasz, G.A., Viswanathan, R.G., Wann, H.J.C., Wind, S.J., Wong, H.S.: Proceedings of the IEEE, 85(4) (1997) pp. 486