Carrier-induced magnetism: How and what we pursue with III-V-based magnetic semiconductor heterostructures

Superlattices and Microstructures

Volumn 25, Issue 1-2, 1999, Pages 251-258

  Munekata, H ^a   Koshihara, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferromagentism; Heterostructures; III V compound semiconductors; Molecular beam epitaxy

Indexed keywords

EID: 0348226702     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1998.0643     Document Type: Review

References (14)

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