Performance and design of vertical, ballistic, heterostructure field-effect transistors

Materials Science and Engineering B

Volumn 51, Issue 1-3, 1998, Pages 76-80

  Wernersson, Lars Erik ^a   Litwin, Andrej ^a   Samuelson, Lars ^a   Xu, Hongqi ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

Ballistic transport; Gallium arsenide; Heterostructure devices

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; HOT CARRIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

BALLISTIC TRANSPORT;

FIELD EFFECT TRANSISTORS;

EID: 0348117154     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00232-8     Document Type: Article

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