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Volumn 83, Issue 12, 1998, Pages 7608-7612

Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

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EID: 0347908503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367876     Document Type: Article
Times cited : (9)

References (39)
  • 1
    • 85034282124 scopus 로고
    • edited by E. Kasper and J. C. Bean Chemical Rubber, Boca Raton, FL, Chap. 11
    • J. C. Bean, in Silicon MBE, edited by E. Kasper and J. C. Bean (Chemical Rubber, Boca Raton, FL, 1988), Vol. 2, Chap. 11.
    • (1988) Silicon MBE , vol.2
    • Bean, J.C.1
  • 11
    • 0029273690 scopus 로고
    • M. R. Sardela, Jr. and G. V. Hansson, Appl. Phys. Lett. 65, 1442 (1994); J. Vac. Sci. Technol. A 13, 314 (1995).
    • (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 314
  • 35
    • 4244083857 scopus 로고
    • I. K. Robinson, Phys. Rev. Lett. 50, 1145 (1983); I. K. Robinson, Y. Kuk. and L. C. Feldman, Phys. Rev. B 29, 4762 (1984).
    • (1983) Phys. Rev. Lett. , vol.50 , pp. 1145
    • Robinson, I.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.