128x128 hybrid FPAs using MBE HgCdTe films on GaAs substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3379, Issue , 1998, Pages 594-600

  Esaev, Dmitrii G ^a   Klimenko, Anatoly G ^a   Kozlov, A I ^a   Marchishin, I V ^a   Ovsyuk, Victor N ^a   Talipov, N Kh ^a   Zakhariash, T I ^a   Vasilyev, Vladimir V ^a   Sidorov, Yuri G ^a   Dvoretsky, Sergey A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Graded gap layers; HgCdTe; LWIR focal plane array; MBE layer

Indexed keywords

CADMIUM; DETECTORS; EPITAXIAL LAYERS; FOCAL PLANE ARRAYS; GALLIUM ALLOYS; INFRARED DETECTORS; MERCURY COMPOUNDS; MICROMETERS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM; THICKNESS MEASUREMENT;

CUT-OFF WAVELENGTHS; GAAS SUBSTRATES; GRADED-GAP LAYERS; HGCDTE; HGCDTE EPITAXIAL LAYERS; HGCDTE FILMS; LWIR FOCAL PLANE ARRAY; MBE LAYER; OPERATION TEMPERATURES;

FOCUSING;

EID: 0347766340     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.317628     Document Type: Conference Paper

References (13)

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