256X256 LWIR FPAs using MBE grown HgCdTe on Si substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3061, Issue , 1997, Pages 248-255

  Ajisawa, Akira ^a   Kawano, Masaya ^a   Tomono, Mitsuko ^a   Miyoshi, Masaru ^a   Oda, Naoki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Hybrid reliability; Infrared focal plane array; MBE; MCT; Si substrate

Indexed keywords

BORON; BORON COMPOUNDS; CARRIER CONCENTRATION; DIODES; EPILAYERS; FOCAL PLANE ARRAYS; FOCUSING; GALLIUM ALLOYS; IMAGE ENHANCEMENT; IMAGING SYSTEMS; INFRARED DETECTORS; INFRARED IMAGING; INFRARED RADIATION; ION BOMBARDMENT; ION IMPLANTATION; MERCURY COMPOUNDS; PASSIVATION; RELIABILITY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; ZINC SULFIDE;

HYBRID RELIABILITY; INFRARED FOCAL PLANE ARRAY; MBE; MCT; SI SUBSTRATE;

SUBSTRATES;

EID: 3242758350     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.280343     Document Type: Conference Paper

References (9)

1. A.Kawahara, A.Ajisawa, K.Miyamato, M.Kanzaki, T.Sasaki, M.Tomono, N.Oda, T.Shima, and Y.Sekihara, "Hybrid 256 X 256 LWIR FPA using MBE grown HgCdTe on GaAs", SPIE , 2552, p.411, 1995
2. T.Kanno, M.Saga, A.Kawahara, R.Oikawa, A.Ajisawa, T.Tomioka, S.Murashima, T.Shima, and N.Yasuda, "Development of MBE grown HgCdTe 64 X 64 FPA for long-wavelength IR detection", SPIE, 2020, p.41, 1993
3. T.Kanno, H.Wada, M.Nagashima, H.Wakayama, K.Awamoto, N.Kajihara, Y.Ito, and M.Nakamura, "A 256 X 256 Element HgCdTe Hybrid IRFPA for 8-10 μ m Band", SPIE, 2552, p.384, 1995
4. Y.P.Chen, J.P.Faurie, and S.Sivanthan, "Suppression of Twin Formation in CdTe(111)B Epilayers Grown by Molecular Beam Epitaxy on Misoriented Si(001)", J.Electron.Mater. 24, p.475, 1995
5. T.J.de Lyon, D.Rajavel, O.K.Wu,S.M.Johnson, C.A.Cockrum, and G.M.Vrnzor, "Direct MBE growth of HgCdTe(112) IR detector structure on Si(112) substrates", SPIE , 2554, p.25, 1995
6. M.Kawano, A.Ajisawa, N.Oda, M.Nagashima, and H.Wada, "HgCdTe and CdTe(113)B growth on Si(112)5° off by molecular beam epitaxy", Appl.Phys.Lett. 69, p.2876, 1996
7. T.Sasaki and N.Oda, "Dislocation reduction in HgCdTe on GaAs by thermal annealing", J.Appl.Phys. 78, p.3121, 1995
8. M.B.Reine, A.K.Sood and T.J.Tredwell, in Semiconductors and Semimetals, edited by R.K.Willardson and A.C.Beer(Academic,New York,1981) Vol.18,Chap.1 and 6.
9. A.Ajisawa and N.Oda, "Improvement in HgCdTe Diode Characteristics by Low Temperature Post-Implantation Annealing", J.Electron.Mater. 24, p.1105,1995