Interstitial H2 in Si: Are all problems solved?

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 58-66

  Stavola, Michael ^a   Chen, E Elinor ^a   Fowler, W Beall ^a   Alvin Shi, G ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

H2; Si; Vibrational spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; APPROXIMATION THEORY; CHEMICAL BONDS; COMPLEXATION; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; INFRARED RADIATION; LIGHT ABSORPTION; MOLECULAR DYNAMICS; MOLECULAR VIBRATIONS; PROBLEM SOLVING; RAMAN SCATTERING; RAMAN SPECTROSCOPY; ROTATION; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

INFRARED ABSORPTION; INTERSTITIAL SITES; VIBRATIONAL SPECTROSCOPY;

SILICON;

EID: 0347764798     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.002     Document Type: Conference Paper

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