Study of the surface structure of tin dioxide layers for gas sensors by atomic-force microscopy

Semiconductors

Volumn 32, Issue 6, 1998, Pages 587-589

  Bestaev, M V ^a,b   Dimitrov, D Ts ^a,b   Il’in, A Yu ^a,b   Moshnikov, V A ^a,b   Trager F ^a,b   Steitz, F ^a,b  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347718567     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187443     Document Type: Article

References (14)

1. D. Kohl, Sens. Actuators 18, 71 (1989).
2. F. F. Vol'kenshteǐn, Electronic Processes on the Surface of Semiconductors Accompanying Chemisorption (Nauka, Moscow, 1987).
3. D. E. Dyshel', Neorg. Mater. 32, No. 1, 59 (1996).
4. C. S. Rastomjee, R. S. Dale, R. J. Schaffer, F. H. Jones, R. G. Egdell, G. C. Georgiadis, M. J. Lee, T. J. Tate, and L. L. Cao, Thin Solid Films 279, 98 (1996).
5. A. S. Bakin, M. V. Bestaev, D. Tz. Dimitrov, V. A. Moshnikov, and Yu. M. Tairov, Thin Solid Films 296, 168 (1997).
6. B. A. Akimov, A. V. Albul, A. M. Gas'kov, V. Yu. Il'in, M. Labo, M. N. Rumyantseva, and L. I. Ryabova, Fiz. Tekh. Poluprovodn. 31, 400 (1997) [Semiconductors 31, 335 (1997)].
7. B. A. Akimov, A. V. Albul, A. M. Gas'kov, V. Yu. Il'in, M. Labo, M. N. Rumyantseva, and L. I. Ryabova, Fiz. Tekh. Poluprovodn. 31, 400 (1997) [Semiconductors 31, 335 (1997)].
8. R. S. Morrison, Sens. Actuators 12, 425 (1987).
9. E. V. Andreeva, A. B. Zil'berman, A. V. Makhin, V. A. Moshnikov, and D. A. Yas'kov, Fiz. Tekh. Poluprovodn. 27, 1095 (1993) [Semiconductors 27, 603 (1993)].
10. E. V. Andreeva, A. B. Zil'berman, A. V. Makhin, V. A. Moshnikov, and D. A. Yas'kov, Fiz. Tekh. Poluprovodn. 27, 1095 (1993) [Semiconductors 27, 603 (1993)].
11. N. I. Dolotov, A. B. Zil'berman, A. V. Makhin, V. A. Moshnikov, and D. A. Yas'kov, Neorg. Mater. 30, No. 1, 83 (1994).
12. R. Assenov, V. A. Moshnikov, and D. A. Yaskov, Cryst. Res. Technol. 21, 1549 (1986).
13. Yu. N. Andreev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, Yu. M. Tairov, and N. P. Yaroslavtsev, Fiz. Tekh. Poluprovodn. 31, 841 (1997) [Semiconductors 31, 714 (1997)].
14. Yu. N. Andreev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, Yu. M. Tairov, and N. P. Yaroslavtsev, Fiz. Tekh. Poluprovodn. 31, 841 (1997) [Semiconductors 31, 714 (1997)].