Raman spectroscopy of Ge/Pd/GaAs contacts

Microelectronic Engineering

Volumn 71, Issue 2, 2004, Pages 177-181

  Machac P ^a   Machovic V ^a  

^a INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

Author keywords

Gallium arsenide; Ge Pd ohmic contacts; Raman spectroscopy; RTA annealing; Solid phase regrowth

Indexed keywords

CHEMICAL BONDS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; METALLIZING; METALLURGY; OHMIC CONTACTS; PALLADIUM COMPOUNDS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM COMPOUNDS;

CONTACT RESISTIVITY; SOLID PHASE GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0347601896     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.11.001     Document Type: Article

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