Controlled fabrication of Mo-seeded Si microcones by Ar+-ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 215, Issue 1-2, 2004, Pages 137-142

  Tanemura, Masaki ^a   Yamauchi, H ^a   Yamane, Y ^a   Okita, T ^a   Tanemura, S ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cone; Mo; Nano structure; Seed; Si

Indexed keywords

DEPOSITION; ELECTRON EMISSION; ELECTRON MICROSCOPES; MOLYBDENUM; NUCLEATION; OPTIMIZATION; OPTOELECTRONIC DEVICES; PUMPING (LASER); SILICON; SPUTTERING; SURFACE STRUCTURE; SURFACE TOPOGRAPHY; THICKNESS MEASUREMENT;

MICROCONES; MICROPROTRUSION;

ION BOMBARDMENT;

EID: 0347600588     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.08.025     Document Type: Article

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