Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7083-7090

  Chenevier, B ^a   Chaix Pluchery, O ^a   Gergaud, P ^b   Thomas, O ^b   La Via, F ^c  

^a LMGP   (France)

^b CNRS   (France)

^c CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ARSENIC; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; MECHANICAL ALLOYING; METALLIC FILMS; MICROSTRUCTURE; STRAIN; STRESS ANALYSIS; THERMAL EXPANSION; THERMOELASTICITY; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

INTERDIFFUSION; SILICIDATION;

THIN FILMS;

EID: 0347593401     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1625092     Document Type: Article

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