Origin of the C49-C54 volume anomaly in TiSi2 thin films: An in-situ XRD and TEM analysis

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 181-187

  Chenevier, B ^a   Chaix Pluchery, O ^a   Matko, I ^a   Madar, R ^a   La Via, F ^b  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b CNR IMETEM   (Italy)

Author keywords

C49 C54 transformation; Film microstructure; TEM; TiSi2; X Ray diffraction

Indexed keywords

ANISOTROPY; ANNEALING; THERMAL EXPANSION; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FILM MICROSTRUCTURE;

THIN FILMS;

EID: 0036776691     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00784-0     Document Type: Conference Paper

References (10)

1. Metastable phase formation in titanium silicon thin films
2. 2
3. 2 thin films
4. 2 C49 phase: X-ray diffraction and first principles calculations
5. In-situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation
6. 2 by Brillouin scattering and molecular dynamics
7. 2
8. 2
9. Polytype formation in zirconium-silicon thin films
10. TEM analysis of an additional metal-rich component at the C49-C54 transformation in Ti/Si thin films capped with TiN