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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6363-6370

Impact of Wafer Geometry and Thermal History on Pressure and von Mises Stress Non-Uniformity During Chemical Mechanical Planarization

(5) Sorooshian, J a Philipossian, A a Goldstein, M b Beaudion, S c Huber, W d

a UNIVERSITY OF ARIZONA (United States)

b INTEL CORPORATION (United States)

c Arizona State University (United States)

d Sumitomo Mitsubishi Silicon Group (United States)

Author keywords

Chemical Mechanical Planarization (CMP); Non uniformity; Pressure Distribution; Thermal History; Von Mises Stress; Wafer Diameter; Wafer Shape

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRODES; HEAT TREATMENT; KINEMATICS; PRESSURE DISTRIBUTION; REYNOLDS NUMBER; SILICON WAFERS; STRESS ANALYSIS; VISCOSITY;

CHEMICAL MECHANICAL PLANARIZATION (CMP); SHEAR FORCES;

CHEMICAL MECHANICAL POLISHING;

EID: 0347590775 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.6363 Document Type: Article

Times cited : (10)

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