Targeting gate CD using feedforward APC and voltage control

Solid State Technology

Volumn 46, Issue 12, 2003, Pages 59-62

  Petronis, Cindy ^a   Patrick, Roger ^b  

^a STMicroelectronics USA   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-DENSITY INDUCTIVELY COUPLED PLASMA REACTORS;

APPROXIMATION THEORY; ELECTRIC COILS; ELECTRIC REACTORS; ELECTRIC TRANSFORMERS; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; PROCESS CONTROL; SEMICONDUCTOR DEVICES; SILICON WAFERS; VOLTAGE CONTROL;

GATES (TRANSISTOR);

EID: 0347567061     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (8)

1. R. Patrick, N. Williams, S. Baldwin, USPatent No.6,174,450, January 16, 2001.
2. G.C.H. Zau, J.W. Butterbaugh, P. Rummel, H.H. Sawin, J. Electrochem. Soc. 138, p. 872, 1991.
3. F. Bose, R. Patrick, H.P. Baltes, J. Vac. Sci. Technol. B 12, p. 2805, 1994.
4. R. Patrick, S. Baldwin, N. Williams, "Closed-loop bias voltage control for plasma etching," Solid State Technology, pp. 59-66, February 2000.
5. R. Patrick, S. Baldwin, N. Williams, "Application of Direct Bias Control in High-density Inductively Coupled Plasma Etching Equipment," J. Vac. Sci. Technol. A 18(2), p. 405, 2000.
6. R. Patrick, N. Williams, C.G. Lee, Proc. SPIE 3213, p. 64, 1997.
7. N. Williams, C.G. Lee, J. Jafarian, R. Patrick, Proc. Electrochem. Soc. 97-9, p. 199, 1997.
8. J. S. Ogle, US Patent No. 4,948,458, August 14, 1990.