Closed-loop bias voltage control for plasma etching

Solid State Technology

Volumn 43, Issue 2, 2000, Pages 59-66

  Patrick, Roger ^a   Baldwin, Scott ^a   Williams, Norman ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CLOSED LOOP CONTROL SYSTEMS; DESIGN FOR TESTABILITY; ELECTRIC POWER SUPPLIES TO APPARATUS; IONS; PLASMA DENSITY; PLASMA SHEATHS; SENSORS; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

CLOSED LOOP BIAS VOLTAGE CONTROL; ION ENERGY; RADIO FREQUENCY VOLTAGE; VOLTAGE SENSOR;

PLASMA ETCHING;

EID: 0034140881     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (5)

1. R. Patrick, N. Williams, C.G. Lee, "Application of RF sensors for real time control of inductively coupled plasma etching equipment," Proc. SPIE, Vol. 3213, p. 64, 1997.
2. N. Williams, C.G. Lee, J. Jafarian, R. Patrick, "Characterization of radio frequency power control using a RF sensor in an inductively coupled plasma etcher," Electrochemical Soc. Proc., Vol. 97-99, p.197, 1997.
3. J.S. Ogle, US Patent No. 4,948,458, Aug. 14, 1990.
4. R. Patrick, P. Schoenbom, H. Toda, F. Bose, "Application of a high density inductively coupled plasma reactor to polysilicon etching," J. Vac. Sci. Technol. A, 11 (4), p. 1296, 1993.
5. R. Patrick, N. Williams, patent pending.